公开(公告)号：US09859848B2

公开(公告)日：2018-01-02

申请号：US14996248

申请日：2016-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyo-Soo Choo ,  Pil-Seon Yoo ,  Duk-Min Kwon ,  Chung-Ho Yu

IPC: G05F1/46 ,  H03F1/30 ,  G05F1/563 ,  G11C5/14 ,  G11C7/04 ,  G11C16/30 ,  G05F1/567 ,  G05F3/24 ,  G05F1/56

CPC classification number: H03F1/301 ,  G05F1/463 ,  G05F1/56 ,  G05F1/563 ,  G05F1/567 ,  G05F3/245 ,  G11C5/147 ,  G11C7/04 ,  G11C16/30 ,  H03F2200/447 ,  H03F2200/468

Abstract: A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.

公开(公告)号：US09576669B2

公开(公告)日：2017-02-21

申请号：US14995246

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyo-Soo Choo ,  Chang-Bum Kim ,  Duk-Min Kwon

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G11C16/32

CPC classification number: G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3427 ,  G11C16/3459

Abstract: In a method of programming a nonvolatile memory device, a program operation is performed on a selected memory cell coupled to a selected word line in response to a program command, a negative bias voltage is applied to the selected word line, a verification pass voltage is applied to an unselected word line after the negative bias voltage is applied to the selected word line, and a first program verification voltage, which is higher than the negative bias voltage and lower than a ground voltage, is applied to the selected word line.

Abstract translation: 在非易失性存储器件的编程方法中，响应于程序命令对与所选字线耦合的所选存储单元执行编程操作，将负偏置电压施加到所选字线，验证通过电压为 在对所选择的字线施加负偏置电压之后施加到未选字线，并且将高于负偏压并低于接地电压的第一程序验证电压施加到所选择的字线。