公开(公告)号：US20230371285A1

公开(公告)日：2023-11-16

申请号：US18302415

申请日：2023-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Lee ,  Dongho Ahn ,  Donggeon Gu

IPC: H10B63/00

CPC classification number: H10B63/845 ,  H10B63/34

Abstract: A memory device includes: a gate stack on a substrate, including insulation layers and gate electrodes alternately stacked in a vertical direction, and defining a through hole in the vertical direction; and a pillar structure in the through hole, the pillar structure including: a plurality of channel portions in the through hole to face the gate electrodes and having annular horizontal cross-sections; a plurality of conductive layers in the through hole to face the insulation layers, having annular horizontal cross-sections, and having inner walls protruding toward a center of the through hole with respect to inner walls of the channel portions; and a variable resistance material layer on the inner walls of the channel portions and the inner walls of the conductive layers, in the through hole, and a first portion of the variable resistance material layer overlaps the conductive layers in the vertical direction.

公开(公告)号：US20230165174A1

公开(公告)日：2023-05-25

申请号：US17938200

申请日：2022-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyup Park ,  Dongho Ahn ,  Donggeon Gu ,  Wonjun Park ,  Jinwoo Lee

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/128 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1253

Abstract: A semiconductor device includes gate electrodes on a substrate, a channel and a resistance pattern. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes in the vertical direction on the substrate. The resistance pattern includes a phase-changeable material. The resistance pattern includes a first vertical extension portion on a sidewall of the channel and extending in the vertical direction, a first protrusion portion on an inner sidewall of the first vertical extension portion and protruding in a horizontal direction substantially parallel to the upper surface of the substrate, and a second protrusion portion on an outer sidewall of the first vertical extension portion and protruding in the horizontal direction and not overlapping the first protrusion portion in the horizontal direction.