公开(公告)号：US20240170043A1

公开(公告)日：2024-05-23

申请号：US18388569

申请日：2023-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGIL LEE ,  YOUNGHUN SEO

IPC: G11C11/4074 ,  G05F1/575 ,  G11C11/4091

CPC classification number: G11C11/4074 ,  G05F1/575 ,  G11C11/4091 ,  H03K19/20

Abstract: A voltage generator including an LDO (low dropout) regulator that supplies a current to an internal voltage node of a sense amplification circuit as feedback control based on a voltage level of the internal voltage node; and a power switch circuit including a plurality of power switches each having one end connected to an external voltage and an opposite end connected to the internal voltage node, and that supplies the current to the internal voltage node as feed-forward control based on a known number of sense amplifiers to be activated. The voltage generator may efficiently supply current according to an operation mode of the sense amplification circuit.

公开(公告)号：US20240339151A1

公开(公告)日：2024-10-10

申请号：US18506552

申请日：2023-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGIL LEE

IPC: G11C11/4091 ,  G11C11/4094

CPC classification number: G11C11/4091 ,  G11C11/4094

Abstract: A sense amplifier which includes a sense amplifier circuit that includes a first NMOS transistor and a second NMOS transistor, the first NMOS transistor being connected to a first bit line and the second NMOS transistor being connected to a second bit line complementary to the first bit line, a first isolation/offset cancellation circuit that includes a first isolation switch connecting the first bit line and a first sensing bit line and a first offset cancellation switch connecting the first bit line and a second sensing bit line complementary to the first sensing bit line, and a second isolation/offset cancellation circuit that includes a second isolation switch connecting the second bit line and the second sensing bit line and a second offset cancellation switch connecting the second bit line and the first sensing bit line.