公开(公告)号：US20200152659A1

公开(公告)日：2020-05-14

申请号：US16739417

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHYUN LEE ,  CHANJIN PARK ,  BYOUNGKEUN SON ,  SUNG-IL CHANG

IPC: H01L27/11582 ,  H01L27/11551 ,  H01L29/792 ,  H01L29/06 ,  H01L27/11578 ,  H01L27/11556

Abstract: A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.

公开(公告)号：US20150214243A1

公开(公告)日：2015-07-30

申请号：US14682111

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHANGHYUN LEE ,  BYOUNGKEUN SON

IPC: H01L27/115 ,  H01L23/50 ,  G11C16/04

CPC classification number: H01L27/11582 ,  G11C16/0408 ,  G11C16/0483 ,  H01L21/28008 ,  H01L23/50 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L2924/00 ,  H01L2924/0002

Abstract: Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.

Abstract translation: 提供了非易失性存储器件及其形成方法。 非易失性存储器件包括多个字线，接地选择线，串选择线和虚拟字线。 虚拟字线和接地选择线之间以及虚拟字线和字线之间的距离中的每一个都大于彼此相邻的一对字线之间的距离。

公开(公告)号：US20140104945A1

公开(公告)日：2014-04-17

申请号：US14135049

申请日：2013-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHYUN LEE ,  BYOUNGKEUN SON

IPC: G11C16/04 ,  H01L21/28

CPC classification number: H01L27/11582 ,  G11C16/0408 ,  G11C16/0483 ,  H01L21/28008 ,  H01L23/50 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L2924/00 ,  H01L2924/0002

Abstract: Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.

Abstract translation: 提供了非易失性存储器件及其形成方法。 非易失性存储器件包括多个字线，接地选择线，串选择线和虚拟字线。 虚拟字线和接地选择线之间以及虚拟字线和字线之间的距离中的每一个都大于彼此相邻的一对字线之间的距离。

公开(公告)号：US20180323209A1

公开(公告)日：2018-11-08

申请号：US16021295

申请日：2018-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHYUN LEE ,  CHANJIN PARK ,  BYOUNGKEUN SON ,  SUNG-IL CHANG

IPC: H01L27/11582 ,  H01L29/792 ,  H01L29/06

CPC classification number: H01L27/11582 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/0649 ,  H01L29/7926

Abstract: A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.

公开(公告)号：US20180019258A1

公开(公告)日：2018-01-18

申请号：US15676011

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHANGHYUN LEE ,  BYOUNGKEUN SON

IPC: G11C16/04 ,  H01L23/50 ,  H01L21/28

CPC classification number: H01L27/11582 ,  G11C16/0408 ,  G11C16/0483 ,  H01L21/28008 ,  H01L23/50 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L2924/00 ,  H01L2924/0002

Abstract: Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.

公开(公告)号：US20150262826A1

公开(公告)日：2015-09-17

申请号：US14726648

申请日：2015-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONG IN YUN ,  JIN-SOO LIM ,  HANSOO KIM ,  SUNG-HWAN JANG ,  YOUNGWOO PARK ,  BYOUNGKEUN SON

IPC: H01L21/28 ,  H01L21/311 ,  H01L27/115

CPC classification number: H01L29/78 ,  H01L21/28282 ,  H01L21/31111 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

Abstract: A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a vertical insulation layer penetrating the thin layer structure to cover an inner wall of the penetration dent, forming a semiconductor pattern penetrating the vertical insulation layer at the penetration dent to be inserted into the substrate, and forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent.

Abstract translation: 一种制造三维半导体存储器件的方法包括通过在衬底上交替地堆叠第一和第二材料层来形成薄层结构，形成穿透薄层结构的穿透凹陷，并使基底凹陷的顶部表面露出 形成穿透薄层结构的垂直绝缘层以覆盖穿透凹陷的内壁，形成穿透穿孔凹陷处的垂直绝缘层的半导体图案，以插入到基板中，并且在薄的层间形成氧化物层 通过氧化渗透凹陷的侧壁来形成层状结构和基底。