公开(公告)号：US20160020265A1

公开(公告)日：2016-01-21

申请号：US14860245

申请日：2015-09-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Seob LEE ,  Dong-Un JIN

IPC: H01L27/32

CPC classification number: H01L27/3274 ,  H01L27/3258 ,  H01L51/5256 ,  H01L51/5296 ,  H01L51/56 ,  H01L2251/5338 ,  H01L2251/55 ,  H01L2251/558

Abstract: An organic light-emitting device including a harrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes as barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer in be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has refractive index of 1.81 to 1.85.

Abstract translation: 一种有机发光器件，包括具有氧化硅层和富含硅的氮化硅层的杂散层。 有机发光器件包括作为阻挡层的柔性基板和设置在阻挡层下方和上方的塑料膜。 阻挡层包括富含硅的氮化硅层和氧化硅层。 堆积富硅的氮化硅层和氧化硅层的顺序没有限制，首先形成氧化硅层，然后可以在硅氧化物层上层叠富硅氮化硅层。 富硅氮化硅层的折射率为1.81〜1.85。

公开(公告)号：US20130140547A1

公开(公告)日：2013-06-06

申请号：US13754405

申请日：2013-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Seob LEE ,  Dong-Un JIN

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3274 ,  H01L27/3258 ,  H01L51/5256 ,  H01L51/5296 ,  H01L51/56 ,  H01L2251/5338 ,  H01L2251/55 ,  H01L2251/558

Abstract: An organic light-emitting device including a barrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes a barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer may be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has a refractive index of 1.81 to 1.85.

Abstract translation: 一种包括具有氧化硅层和富硅氮化硅层的阻挡层的有机发光装置。 有机发光装置包括柔性基板，其包括阻挡层和设置在阻挡层下方和上方的塑料膜。 阻挡层包括富含硅的氮化硅层和氧化硅层。 富硅硅氮化物层和氧化硅层的层叠顺序没有限制，可以首先形成氧化硅层，然后可以在硅氧化物层上层叠富硅的氮化硅层。 富硅氮化硅层的折射率为1.81〜1.85。

公开(公告)号：US20140339527A1

公开(公告)日：2014-11-20

申请号：US14280526

申请日：2014-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Seob LEE ,  Yong-Hwan Park

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/5256 ,  H01L27/32 ,  H01L51/0097 ,  H01L51/524

Abstract: Provided is an organic light-emitting diode (OLED) display including: first and second plastic layers; a first barrier layer and a first intermediate layer each positioned between the first and second plastic layers; and an OLED layer formed on the second plastic layer. The first barrier layer comprises silicon nitride.

Abstract translation: 提供了一种有机发光二极管（OLED）显示器，包括：第一和第二塑料层; 每个位于第一和第二塑料层之间的第一阻挡层和第一中间层; 以及形成在第二塑料层上的OLED层。 第一阻挡层包括氮化硅。

公开(公告)号：US20140170790A1

公开(公告)日：2014-06-19

申请号：US14186194

申请日：2014-02-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Seob LEE ,  Yong-Hwan PARK ,  Young-Shin PYO

IPC: H01L27/12 ,  G02F1/1333

CPC classification number: H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract translation: 根据示例实施例的薄膜晶体管包括：基板主体; 形成在所述基板主体上并包括具有约2000欧姆/平方至约8000欧姆/平方的表面电阻的多晶硅膜的半导体层; 以及每个与半导体层接触并且包括具有约350至约2000欧姆的电阻的金属材料的源电极和漏电极。

公开(公告)号：US20140319493A1

公开(公告)日：2014-10-30

申请号：US14262979

申请日：2014-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Seob LEE ,  Jin-Gyu KANG ,  Yong-Kwan KIM ,  Sang-Ki KIM

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/1218 ,  H01L27/3244 ,  H01L29/78603 ,  H01L51/0097

Abstract: A substrate for a display apparatus includes a barrier layer disposed on a base substrate. The barrier layer includes a silicon oxide layer, and the silicon oxide layer includes a first part and a second part along a thickness direction of the barrier layer. The amount of silicon in the first part is different from the amount of silicon in the second part.

Abstract translation: 用于显示装置的基板包括设置在基底基板上的阻挡层。 阻挡层包括氧化硅层，氧化硅层包括沿阻挡层的厚度方向的第一部分和第二部分。 第一部分中的硅的量不同于第二部分中的硅的量。