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    Solid-state imaging apparatus and driving method thereof
    5.
    发明申请
    Solid-state imaging apparatus and driving method thereof 有权
    固体摄像装置及其驱动方法

    公开(公告)号：US20070177041A1

    公开(公告)日：2007-08-02

    申请号：US11728140

    申请日：2007-03-23

    申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

    发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Keiji Mabuchi

    IPC分类号： H04N5/335

    CPC分类号： H04N5/3575 ,  H01L27/14612 ,  H04N5/357 ,  H04N5/374

    摘要： Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading selection transistor and the reading transistor are formed with a two-layer gate structure, and gate potential of the reading selection transistor and the reading transistor is set to a negative potential. Thereby, a lower layer of a gate region of the reading transistor and the reading selection transistor is controlled to a negative potential. Thus, depletion in the lower layer region is suppressed to reduce leakage current.

    摘要翻译： 每个单位像素包括光电二极管，读选择晶体管，读晶体管，放大晶体管，复位晶体管和水平选择晶体管，因此形成点序读取5-Tr型的MOS图像传感器。 读取选择晶体管和读取晶体管形成为双层栅极结构，读取选择晶体管和读取晶体管的栅极电位被设置为负电位。 由此，读取晶体管的栅极区域的下层和读取选择晶体管被控制为负电位。 因此，抑制下层区域的耗尽以减少漏电流。

    Solid-state image-sensing device and method for producing the same
    7.
    发明授权
    Solid-state image-sensing device and method for producing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号：US06423993B1

    公开(公告)日：2002-07-23

    申请号：US09499449

    申请日：2000-02-07

    申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

    发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

    IPC分类号： H01L31062

    CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    摘要： A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

    摘要翻译： 固态图像感测装置具有通过器件隔离层对应于像素的pn结传感器部分。 固体摄像装置包括形成在第一导电型第一半导体阱区域和器件隔离层之间的第一导电型第二半导体阱区域。 当设备运行时，每个传感器部分的耗尽层扩散到位于每个传感器部件下方的第一半导体阱区域。

    Method for producing solid-state image-sensing device
    9.
    发明授权
    Method for producing solid-state image-sensing device 有权
    固态摄像装置的制造方法

    公开(公告)号：US06417023B2

    公开(公告)日：2002-07-09

    申请号：US09799995

    申请日：2001-03-06

    申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

    发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

    IPC分类号： H01L2100

    CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    摘要： A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

    摘要翻译： 固态图像感测装置具有通过器件隔离层对应于像素的pn结传感器部分。 固体摄像装置包括形成在第一导电型第一半导体阱区域和器件隔离层之间的第一导电型第二半导体阱区域。 当设备运行时，每个传感器部分的耗尽层扩散到位于每个传感器部件下方的第一半导体阱区域。