- 专利标题： Solid-state imaging device
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申请号： US11981002申请日： 2007-10-30
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公开(公告)号： US20080067565A1公开(公告)日： 2008-03-20
- 发明人: Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
- 申请人： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 优先权： JPJP2003-375202 20031105
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
公开/授权文献
- US07804116B2 Solid-state imaging device 公开/授权日：2010-09-28
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