知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

73 条记录 (耗时 0.027 秒)

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    1.
    发明申请
    Continuous plane of thin-film materials for a two-terminal cross-point memory 失效
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US20100265762A1

    公开(公告)日：2010-10-21

    申请号：US12803214

    申请日：2010-06-21

    申请人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hasen

    发明人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hasen

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165 ,  Y10S257/903

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include anon-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电连接的欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    2.
    发明申请
    Continuous plane of thin-film materials for a two-terminal cross-point memory 审中-公开
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US20110133147A1

    公开(公告)日：2011-06-09

    申请号：US12931773

    申请日：2011-02-09

    申请人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    发明人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165 ,  Y10S257/903

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    CONTINUOUS PLANE OF THIN-FILM MATERIALS FOR A TWO-TERMINAL CROSS-POINT MEMORY
    3.
    发明申请
    CONTINUOUS PLANE OF THIN-FILM MATERIALS FOR A TWO-TERMINAL CROSS-POINT MEMORY 审中-公开
    连续两面终端薄膜材料的薄膜材料

    公开(公告)号：US20120292585A1

    公开(公告)日：2012-11-22

    申请号：US13566584

    申请日：2012-08-03

    申请人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    发明人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    IPC分类号： H01L47/00 ,  H01L21/02

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    6.
    发明申请
    Continuous plane of thin-film materials for a two-terminal cross-point memory 失效
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US20090026441A1

    公开(公告)日：2009-01-29

    申请号：US11881474

    申请日：2007-07-26

    申请人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    发明人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    IPC分类号： H01L29/15

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165 ,  Y10S257/903

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    7.
    发明授权
    Continuous plane of thin-film materials for a two-terminal cross-point memory 有权
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US08237142B2

    公开(公告)日：2012-08-07

    申请号：US12932642

    申请日：2011-03-01

    申请人： Robin Cheung ,  Jonathan Bornstein ,  David Hansen ,  Travis Byonghyop Oh ,  Darrell Rinerson

    发明人： Robin Cheung ,  Jonathan Bornstein ,  David Hansen ,  Travis Byonghyop Oh ,  Darrell Rinerson

    IPC分类号： H01L29/02 ,  H01L29/06

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    9.
    发明授权
    Continuous plane of thin-film materials for a two-terminal cross-point memory 失效
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US07742323B2

    公开(公告)日：2010-06-22

    申请号：US11881474

    申请日：2007-07-26

    申请人： Darrell Rinerson ,  Jonathan Bornstein ,  Robin Cheung ,  David Hansen ,  Travis Byonghyop Oh

    发明人： Darrell Rinerson ,  Jonathan Bornstein ,  Robin Cheung ,  David Hansen ,  Travis Byonghyop Oh

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165 ,  Y10S257/903

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。