公开(公告)号：US20160365721A1

公开(公告)日：2016-12-15

申请号：US15141676

申请日：2016-04-28

Applicant: Renesas Electronics Corporation

Inventor： Osamu SOMA ,  Akira UEMURA

IPC: H02H5/04 ,  B60Q1/04 ,  G07C9/00 ,  H05B33/08 ,  F02N11/08 ,  H03K19/0175 ,  B60Q1/26

CPC classification number: G07C9/00182 ,  B60Q11/005 ,  F02N11/0807 ,  G07C9/00309 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/181 ,  H03K19/017509 ,  H05B33/0815 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00012

Abstract: A sophisticated semiconductor device is provided. A semiconductor device including an IPD chip and an MCU chip which are included in one package. The IPD chip includes: a power transistor that drives an external load; a gate drive circuit that drives the power transistor; and a protection circuit that protects the power transistor from having a breakdown. The MCU chip includes an arithmetic processing unit that performs arithmetic processing based on detected data output from the protection circuit, and a storage unit that stores a program for the arithmetic processing unit. The MCU chip has a function of controlling operation of the power transistor according to the detected data.

Abstract translation: 提供了一种复杂的半导体器件。 包括一个包装中的IPD芯片和MCU芯片的半导体器件。 IPD芯片包括：驱动外部负载的功率晶体管; 驱动功率晶体管的栅极驱动电路; 以及保护功率晶体管不发生故障的保护电路。 MCU芯​​片包括：运算处理单元，其基于从保护电路输出的检测数据进行运算处理;以及存储单元，存储用于运算处理单元的程序。 MCU芯​​片具有根据检测到的数据来控制功率晶体管的操作的功能。

公开(公告)号：US20160093557A1

公开(公告)日：2016-03-31

申请号：US14871769

申请日：2015-09-30

Applicant: Renesas Electronics Corporation

Inventor： Atsushi NISHIKIZAWA ,  Tadatoshi DANNO ,  Hiroyuki NAKAMURA ,  Osamu SOMA ,  Akira UEMURA

IPC: H01L23/495 ,  H01L25/065 ,  H01L23/58 ,  H01L23/31

CPC classification number: H01L23/49503 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/585 ,  H01L25/0655 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/33505 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48111 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A semiconductor device includes first and second semiconductor chips, a plurality of leads, a plurality of wires, and a sealing body sealing those components. A first pad electrode, a second pad electrode, and an internal wiring electrically connected to the first and second electrode pads are formed on a main surface of the first semiconductor chip. A third pad electrode of the second semiconductor chip is electrically connected to the first electrode pad of the first semiconductor chip via a first wire, and the second electrode pad of the first semiconductor chip is electrically connected to a first lead via a second wire. A distance between the first lead and the first semiconductor chip is smaller than a distance between the first lead and the second semiconductor chip. The first electrode pad, the second electrode pad and the internal wiring are not connected to any circuit formed in the first semiconductor chip.

Abstract translation: 半导体器件包括第一和第二半导体芯片，多个引线，多个引线和密封这些部件的密封体。 电连接到第一和第二电极焊盘的第一焊盘电极，第二焊盘电极和内部布线形成在第一半导体芯片的主表面上。 第二半导体芯片的第三焊盘电极经由第一导线电连接到第一半导体芯片的第一电极焊盘，第一半导体芯片的第二电极焊盘经由第二导线电连接到第一引线。 第一引线和第一半导体芯片之间的距离小于第一引线和第二半导体芯片之间的距离。 第一电极焊盘，第二电极焊盘和内部布线不连接到形成在第一半导体芯片中的任何电路。

公开(公告)号：US20180375506A1

公开(公告)日：2018-12-27

申请号：US15968275

申请日：2018-05-01

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hidetoshi TANEMURA ,  Akira UEMURA

IPC: H03K17/14 ,  H05B37/02 ,  H05B39/04 ,  G01R31/26 ,  G01R31/00

Abstract: A hot sensor detects a temperature of an output transistor and a cold sensor detects a temperature of a position distant from the output transistor. When the temperature of the hot sensor rises more than a reference temperature, a temperature detecting circuit asserts an overtemperature detecting signal, and when a temperature difference between the hot sensor and the cold sensor is more than a reference temperature difference, the above circuit asserts the temperature difference detecting signal. A current limiting circuit generates a limited current signal sequentially variable with the negative temperature characteristic for the temperature of the cold sensor and controls a drive current of the output transistor to a current value depending on the signal level of the limited current signal when the overtemperature detecting signal is asserted.

公开(公告)号：US20170236820A1

公开(公告)日：2017-08-17

申请号：US15587177

申请日：2017-05-04

Applicant: Renesas Electronics Corporation

Inventor： Akira UEMURA ,  Akihiro NAKAHARA

IPC: H01L27/06 ,  B60R16/03 ,  H05B37/02 ,  H05B39/04 ,  H01L29/78 ,  H03K17/14

CPC classification number: H01L27/0629 ,  B60R16/03 ,  H01L29/4236 ,  H01L29/7827 ,  H03K17/145 ,  H05B33/089 ,  H05B37/0227 ,  H05B39/04

Abstract: A semiconductor integrated power device including: an output transistor configured to drive an external load element; a temperature detection circuit configured to: output a first detection signal in reference to a temperature difference between a temperature of the output transistor and an ambient temperature; and output a second detection signal in reference to a temperature difference between a temperature of the output transistor and a first reference temperature; and a current limiter circuit configured to limit a current flowing through the output transistor according to the first detection signal and the second detection signal. The temperature detection circuit activates and inactivates the first detection signal or the second detection signal based on an output of a first hysteresis circuit.