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    Word lines for memory cells
    2.
    发明授权
    Word lines for memory cells 有权
    记忆单元的字线

    公开(公告)号：US07545009B2

    公开(公告)日：2009-06-09

    申请号：US11072159

    申请日：2005-03-04

    申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

    发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

    IPC分类号： H01L29/78

    CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

    摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

    Methods of providing ohmic contact
    4.
    发明授权
    Methods of providing ohmic contact 有权
    提供欧姆接触的方法

    公开(公告)号：US07109115B2

    公开(公告)日：2006-09-19

    申请号：US11071922

    申请日：2005-03-04

    申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

    发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

    IPC分类号： H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

    摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

    Word lines for memory cells
    6.
    发明申请
    Word lines for memory cells 有权
    记忆单元的字线

    公开(公告)号：US20050161721A1

    公开(公告)日：2005-07-28

    申请号：US11072159

    申请日：2005-03-04

    申请人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

    发明人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

    IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L29/45 ,  H01L27/108

    CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

    摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

    Methods of providing ohmic contact
    7.
    发明申请
    Methods of providing ohmic contact 有权
    提供欧姆接触的方法

    公开(公告)号：US20050181599A1

    公开(公告)日：2005-08-18

    申请号：US11071922

    申请日：2005-03-04

    申请人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

    发明人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

    IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L29/45 ,  C04B35/00 ,  H01L21/20 ,  H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

    摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

    Depletion compensated polysilicon electrodes
    8.
    发明授权
    Depletion compensated polysilicon electrodes 失效

    公开(公告)号：US06333536B1

    公开(公告)日：2001-12-25

    申请号：US09702584

    申请日：2000-10-31

    申请人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    发明人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    IPC分类号： H01L27108

    CPC分类号： H01L27/1085 ,  H01L21/76895 ,  H01L28/84

    摘要： A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formation of the capacitor dielectric.

    Depletion compensated polysilicon electrodes
    9.
    发明授权
    Depletion compensated polysilicon electrodes 失效
    消耗补偿多晶硅电极

    公开(公告)号：US06506645B2

    公开(公告)日：2003-01-14

    申请号：US09978137

    申请日：2001-10-15

    申请人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    发明人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    IPC分类号： H01L31062

    CPC分类号： H01L27/1085 ,  H01L21/76895 ,  H01L28/84

    摘要： A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formnation of the capacitor dielectric.

    摘要翻译： 制造半导体集成电路中的电容器，其具有在电极/电介质界面附近引入的固定电荷密度。 固定电荷密度补偿耗尽层的影响，否则会降低有效电容。 通过将耗尽电容的不期望的影响转移到工作电压范围之外，电容器被有效地转换为积累模式。 固定电荷密度优选通过在形成电容器电介质之前进行的等离子体氮化处理来引入。

    Depletion compensated polysilicon electrodes
    10.
    发明授权
    Depletion compensated polysilicon electrodes 失效
    消耗补偿多晶硅电极

    公开(公告)号：US06180449B2

    公开(公告)日：2001-01-30

    申请号：US09232511

    申请日：1999-01-15

    申请人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    发明人： Ravi Iyer ,  Luan Tran ,  Charles L. Turner

    IPC分类号： H01L218242

    CPC分类号： H01L27/1085 ,  H01L21/76895 ,  H01L28/84

    摘要： A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formation of the capacitor dielectric.

    摘要翻译： 制造半导体集成电路中的电容器，其具有在电极/电介质界面附近引入的固定电荷密度。 固定电荷密度补偿耗尽层的影响，否则会降低有效电容。 通过将耗尽电容的不期望的影响转移到工作电压范围之外，电容器被有效地转换为积累模式。 固定电荷密度优选通过在形成电容器电介质之前进行的等离子体氮化处理来引入。