公开(公告)号：US07123451B2

公开(公告)日：2006-10-17

申请号：US10668998

申请日：2003-09-24

申请人： Rachid Sbiaa ,  Mikio Matsuzaki ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Mikio Matsuzaki ,  Haruyuki Morita

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49032

摘要： The thin-film magnetic head of the present invention is provided with an antiferromagnetic layer, a pinned layer whose direction of magnetization is fixed by exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization varies according to external magnetic field, an intermediate layer disposed between the pinned layer and free layer, and a pair of electrode layers for supplying a sense current in a layer thickness direction of the free layer. One electrode layer is connected to the pinned layer. Due to this configuration, a sense current flows through the free layer, the intermediate layer, and the pinned layer, but basically does not flow through the antiferromagnetic layer. As a consequence, the antiferromagnetic layer does not contribute to total resistance of the magnetoresistance element, allowing a high magnetoresistance ratio to be obtained.

摘要翻译： 本发明的薄膜磁头设置有反铁磁层，通过与反铁磁层交换耦合来固定磁化方向的钉扎层，磁化方向根据外部磁场而变化的自由层， 设置在被钉扎层和自由层之间的中间层，以及用于在自由层的层厚度方向上提供感测电流的一对电极层。 一个电极层连接到固定层。 由于这种结构，检测电流流过自由层，中间层和被钉扎层，但基本上不流过反铁磁性层。 因此，反铁磁性层对磁电阻元件的总电阻无贡献，可以获得高的磁阻比。

公开(公告)号：US07583482B2

公开(公告)日：2009-09-01

申请号：US10998637

申请日：2004-11-30

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/0018 ,  G11B2005/0029 ,  G11B2005/3996

摘要： An in-stack bias is provided for stabilizing the free layer of a ballistic magneto resistive (BMR) sensor. In-stack bias includes a decoupling layer that is a spacer between the free layer and a ferromagnetic stabilizer layer of the in-stack bias, and an anti-ferromagnetic layer positioned above the ferromagnetic layer. The spacer is a nano-contact layer having magnetic particles positioned in a non-magnetic matrix. The free layer may be single layer, composed or synthetic, and the in-stack bias may be laterally bounded by the sidewalls, or alternatively, extend above the sidewalls and spacer. Additionally, a hard bias may also be provided. The spacer of the in-stack bias results in the reduction of the exchange coupling between the free layer and ferromagnetic stabilizing layer, an improved AΔR due to confinement of current flow through a smaller area, and increased MR due to the domain wall created within the magnetic nano-contact.

摘要翻译： 提供堆叠偏压以稳定弹道磁阻（BMR）传感器的自由层。 堆叠内偏压包括去耦层，其是自由层与堆叠内偏压的铁磁稳定层之间的隔离层，以及位于铁磁层上方的反铁磁层。 间隔物是具有位于非磁矩阵中的磁性颗粒的纳米接触层。 自由层可以是单层的，组成的或合成的，叠层间偏压可以由侧壁横向界定，或者替代地在侧壁和间隔物上方延伸。 另外，还可以提供硬偏压。 堆叠偏压的间隔物导致自由层和铁磁稳定层之间的交换耦合的减少，由于电流流过较小区域的限制而导致的改进的ADeltaR以及由于在 磁性纳米接触。

公开(公告)号：US20060114616A1

公开(公告)日：2006-06-01

申请号：US10998597

申请日：2004-11-30

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： C23C14/46 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3227 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/301 ,  H01F41/305 ,  H01L43/12

摘要： A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

摘要翻译： 提供一种生产用于具有纳米收缩间隔物的磁阻（MR）传感器的自旋阀中的薄膜的方法。 自旋阀的底部沉积到被钉扎层，设置沉积室，并且间隔层溅射在其上。 主离子束产生离子到包括磁性芯片和绝缘体材料的复合表面上。 同时，辅助离子束将离子直接提供给衬底，从而提高了自由层的柔软度和间隔层的平滑度。 还提供中和剂以防止离子排斥并改善离子束聚焦。 结果，可以形成薄膜间隔物，并且形成自由层和被钉扎层之间具有低自由层矫顽力和低层间耦合的纳米收缩的MR自旋阀。

公开(公告)号：US07602591B2

公开(公告)日：2009-10-13

申请号：US11157961

申请日：2005-06-22

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

摘要： A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated from a high perpendicular anisotropy layer by a spacer. Thus, the high anisotropy material introduces an out-of-plane component by exchange coupling. The high perpendicular anisotropy material also has low spin polarization. Further, the low anisotropy material positioned closer to the pinned layer has a high spin polarization. As a result, the magnetization of the low anisotropy material is re-oriented from an in-plane direction to an out-of-plane direction. Accordingly, the overall free layer perpendicular anisotropy can be made small as a result of the low anisotropy material and the high anisotropy material. Adjusting the thickness of these layers, as well as the spacer therebetween, can further lower the anisotropy and thus further increase the sensitivity.

摘要翻译： 磁阻元件作为具有合成自由层的自旋阀提供。 更具体地，合成自由层包括通过间隔物与高垂直各向异性层分离的低垂直各向异性层。 因此，高各向异性材料通过交换耦合引入了平面外部分。 高垂直各向异性材料也具有低自旋极化。 此外，位于更靠近被钉扎层的低各向异性材料具有高的自旋极化。 结果，低各向异性材料的磁化从面内方向重新取向到面外方向。 因此，作为低各向异性材料和高各向异性材料的结果，可以使整个自由层垂直各向异性变小。 调整这些层的厚度以及它们之间的间隔物可以进一步降低各向异性，从而进一步提高灵敏度。

公开(公告)号：US20070035888A1

公开(公告)日：2007-02-15

申请号：US10572038

申请日：2004-04-02

申请人： Rachid Sbiaa ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Haruyuki Morita

IPC分类号： G11B5/127

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： A reader of a current-perpendicular-to-plane magnetoresistive head includes a spin valve with sensor having a stabilizer adjacent thereto, to substantially avoid magnetization distribution at the edge of the sensor due to vortex effect and charge accumulation. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer includes a pinned ferromagnetic layer adjacent to the free layer, and an antiferromagnetic layer positioned thereon. It becomes easy to provide an effective biasing using a variety of materials having different magnetic moments and thickness. Also problems related to sensor edge for small size will be overcome. A method of manufacturing the reader is also provided.

摘要翻译： 电流 - 垂直于平面的磁阻头的读取器包括具有与其相邻的稳定器的传感器的自旋阀，以基本上避免由于涡流效应和电荷累积而在传感器的边缘处的磁化分布。 至少一个自由层通过间隔物与至少一个钉扎层隔开。 在自由层之上，提供覆盖层。 稳定器包括与自由层相邻的钉扎铁磁层和位于其上的反铁磁层。 使用具有不同磁矩和厚度的各种材料提供有效的偏置变得容易。 还将克服与小尺寸传感器边缘有关的问题。 还提供了制造读取器的方法。

公开(公告)号：US20090009915A1

公开(公告)日：2009-01-08

申请号：US12179293

申请日：2008-07-24

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/33

CPC分类号： C23C14/46 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3227 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/301 ,  H01F41/305 ,  H01L43/12

摘要： A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

摘要翻译： 提供一种生产用于具有纳米收缩间隔物的磁阻（MR）传感器的自旋阀中的薄膜的方法。 自旋阀的底部沉积到被钉扎层，设置沉积室，并且间隔层溅射在其上。 主离子束产生离子到包括磁性芯片和绝缘体材料的复合表面上。 同时，辅助离子束将离子直接提供给衬底，从而提高了自由层的柔软度和间隔层的平滑度。 还提供中和剂以防止离子排斥并改善离子束聚焦。 结果，可以形成薄膜间隔物，并且形成自由层和被钉扎层之间具有低自由层矫顽力和低层间耦合的纳米收缩的MR自旋阀。

公开(公告)号：US20070035889A1

公开(公告)日：2007-02-15

申请号：US10572069

申请日：2004-04-02

申请人： Rachid Sbiaa ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Haruyuki Morita

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/1278 ,  G11B5/39 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The pinned layer is highly resistive and includes a Co100-xFex layer used in at least a part of the pinned layer. Optionally, this material may also be used in at least a part of the free layer. The value of x may be various values between 10 and 75 percent, plus or minus about 10 percent. The pinned layer is a single layer, or a synthetic multi-layered structure having a spacer between sub-layers. To increase resistivity, oxygen is introduced during deposition of either or both of the pinned layer and free layer.

摘要翻译： 磁阻读取头包括具有至少一个自由层的自旋阀，所述至少一个自由层通过间隔件与至少一个钉扎层隔开。 被钉扎层是高电阻性的，并且包括在被钉扎层的至少一部分中使用的Co-100-x-Fe x Fe x层。 任选地，该材料也可用于至少一部分自由层。 x的值可以是10％和75％之间的各种值，加或减约10％。 被钉扎层是单层，或在子层之间具有间隔物的合成多层结构。 为了提高电阻率，在沉积被钉扎层和自由层中的任一个或两者时，引入氧气。

公开(公告)号：US20060114620A1

公开(公告)日：2006-06-01

申请号：US10998660

申请日：2004-11-30

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A reader of a magnetoresistive head includes a granular type free layer. The magnetoresistive head is for a current-perpendicular to plane type, and can be used in either a giant magnetoresistance (GMR) or ballistic magnetoresistance (BMR) scheme. The granular type free layer includes an insulating matrix, for example but not by way of limitation, Al2O3, and metal magnetic grains, for example but not by way of limitation, Ni, CoFe or NiFe. The metal grain size is about 10 to 30 nm, and the effect of having these grains interspersed in the insulative matrix is to provide a softer granular type free layer having a low magnetization. Accordingly, the granular type free layer of the present invention can be made thicker, on the order of about 5 to 10 nm, thus further improving overall thermal stability, reducing spin transfer effect and improving output read signal.

摘要翻译： 磁阻头的读取器包括粒状自由层。 磁阻头用于电流垂直于平面型，可用于巨磁电阻（GMR）或弹道磁阻（BMR）方案。 颗粒状自由层包括绝缘基质，例如但不限于Al 2 O 3，和金属磁性颗粒，例如但不限于 Ni，CoFe或NiFe。 金属粒径为10〜30nm左右，散布在绝缘基体中的这些晶粒的效果是提供具有低磁化强度的较软的粒状自由层。 因此，可以使本发明的粒状自由层的厚度约为5〜10nm左右，从而进一步提高整体热稳定性，降低自旋转移效果，提高输出读出信号。

公开(公告)号：US20050018366A1

公开(公告)日：2005-01-27

申请号：US10869838

申请日：2004-06-18

申请人： Rachid Sbiaa ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Haruyuki Morita

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/31

摘要： A thin-film magnetic head is provided with an antiferromagnetic layer; a pinned layer comprising a first ferromagnetic layer, in contact with the antiferromagnetic layer, a second ferromagnetic layer having a direction of magnetization opposite from that of the first ferromagnetic layer, and a nonmagnetic spacer layer disposed between the first and second ferromagnetic layers; a free layer; and an intermediate layer disposed between the pinned layer and the free layer. The first ferromagnetic layer of the pinned layer is provided with a first layer comprising a ferromagnetic material, and a second layer, disposed between the first layer and the nonmagnetic spacer layer, comprising a ferromagnetic material. The first layer has a bulk scattering coefficient lower than that of the second layer.

摘要翻译： 薄膜磁头设有反铁磁层; 被钉扎层包括与反铁磁层接触的第一铁磁层，具有与第一铁磁层相反的磁化方向的第二铁磁层和设置在第一和第二铁磁层之间的非磁性间隔层; 自由层 以及设置在被钉扎层和自由层之间的中间层。 被钉扎层的第一铁磁层设置有包括铁磁材料的第一层和设置在第一层和非磁性间隔层之间的包括铁磁材料的第二层。 第一层具有比第二层低的体散射系数。

公开(公告)号：US07473478B2

公开(公告)日：2009-01-06

申请号：US11320821

申请日：2005-12-30

申请人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

发明人： Rachid Sbiaa ,  Isamu Sato ,  Haruyuki Morita

IPC分类号： G11B5/39 ,  H01L41/00

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/325

摘要： A compact oscillator in which the oscillation frequency can be adjusted to a desired value is provided. The oscillator includes: a magnetoresistive effect element comprising a pinned layer, a nonmagnetic spacer layer, and a free layer of which magnetization direction is changeable that are stacked in that order, a magnetization direction of the pinned layer being substantially fixed along a direction perpendicular to a stack direction; a bias magnetic field application unit for applying a bias magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the magnetization direction of the pinned layer; and an adjusting magnetic field application unit for applying an adjusting magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the direction of the bias magnetic field.

摘要翻译： 提供了可以将振荡频率调节到期望值的紧凑型振荡器。 所述振荡器包括：磁阻效应元件，其包括被钉扎层，非磁性间隔层以及沿其顺序层叠磁化方向可变的自由层，所述被钉扎层的磁化方向基本上沿垂直于 堆栈方向 偏置磁场施加单元，用于在垂直于堆叠方向并且与被钉扎层的磁化方向不同的方向上将自由层施加偏置磁场; 以及调整用磁场施加单元，用于在垂直于堆叠方向的方向上向自由层施加调节磁场，并且不同于偏置磁场的方向。