公开(公告)号：US20130140703A1

公开(公告)日：2013-06-06

申请号：US13751486

申请日：2013-01-28

Applicant: ROUND ROCK RESEARCH, LLC

Inventor： Steven T. Harshfield

IPC: H01L29/45

CPC classification number: H01L29/45 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691 ,  Y10S257/91

Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

Abstract translation: 描述了环状，线性和点接触结构，其显示出比常规圆形接触插塞大大降低由光刻和沉积变化引起的对工艺偏差的敏感性。 在一个实施例中，使用诸如碳或氮化钛的标准导电材料来形成接触。 在替代实施例中，存储材料本身用于形成接触。 这些接触结构可以通过各种方法制造，包括化学机械平面化和小面刻蚀。

公开(公告)号：US08786101B2

公开(公告)日：2014-07-22

申请号：US13751486

申请日：2013-01-28

Applicant: Round Rock Research, LLC

Inventor： Steven T. Harshfield

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L29/45 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691 ,  Y10S257/91

Abstract: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

Abstract translation: 描述了环状，线性和点接触结构，其显示出比常规圆形接触插塞大大降低由光刻和沉积变化引起的对工艺偏差的敏感性。 在一个实施例中，使用诸如碳或氮化钛的标准导电材料来形成接触。 在替代实施例中，存储材料本身用于形成接触。 这些接触结构可以通过各种方法制造，包括化学机械平面化和小面刻蚀。