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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220038054A1

    公开(公告)日：2022-02-03

    申请号：US17383169

    申请日：2021-07-22

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Toshifumi UEMURA

    IPC: H03B5/04 ,  H03K3/03 ,  G06F1/28 ,  G06F1/04 ,  G01R19/165

    Abstract: A semiconductor device 1 includes: a first oscillator 11_RC1 configured to operate at a detected voltage, the first oscillator having first temperature dependency; a second oscillator 11_RC4 configured to operate at the detected voltage, the second oscillator having second temperature dependency; a count unit configured to count an output of the first oscillator and an output of the second oscillator, the output of the first oscillator and the output of the second oscillator being supplied to the count unit; an arithmetic unit configured to calculate a count value CNT (T1) of the first oscillator and a count value CNT (T4) of the second oscillator, the count values of the first and second oscillators being counted by the count unit; and a determining unit configured to compare an output of the arithmetic unit with a threshold value to output a detected result signal corresponding to a result of the comparison.

    SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    3.
    发明申请
    SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20190074829A1

    公开(公告)日：2019-03-07

    申请号：US16045016

    申请日：2018-07-25

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Kazuki FUKUOKA ,  Toshifumi UEMURA ,  Yuko KITAJI

    IPC: H03K17/22 ,  G05F3/24

    Abstract: There is a need to provide a semiconductor device, a semiconductor system, and a semiconductor device manufacturing method capable of accurately monitoring a minimum operating voltage for a monitoring-targeted circuit. A monitor portion of a semiconductor system according to one embodiment includes a voltage monitor and a delay monitor. The voltage monitor is driven by power-supply voltage SVCC different from power-supply voltage VDD supplied to an internal circuit as a monitoring-targeted circuit and monitors power-supply voltage VDD. The delay monitor is driven by power-supply voltage VDD and monitors signal propagation time for a critical path in the internal circuit. The delay monitor is configured so that a largest on-resistance of on-resistances for a plurality of transistors configuring the delay monitor is smaller than a largest on-resistance of on-resistances for a plurality of transistors configuring the internal circuit.

    SEMICONDUCTOR APPARATUS, DEGRADATION VALUE DETERMINATION SYSTEM AND PROCESSING SYSTEM
    4.
    发明申请
    SEMICONDUCTOR APPARATUS, DEGRADATION VALUE DETERMINATION SYSTEM AND PROCESSING SYSTEM 审中-公开

    公开(公告)号：US20170141762A1

    公开(公告)日：2017-05-18

    申请号：US15349036

    申请日：2016-11-11

    Applicant: Renesas Electronics Corporation

    Inventor： Toshifumi UEMURA ,  Kazuki FUKUOKA

    IPC: H03K3/011 ,  G01R31/26 ,  H03K3/03

    CPC classification number: H03K3/011 ,  G01R31/2601 ,  G01R31/2856 ,  H01L22/34 ,  H03K3/0315 ,  H03L7/00

    Abstract: A semiconductor apparatus includes an operation oscillator 13, a reference oscillator 16, a first operation switch 11 connected in series with the operation oscillator 13 between a power supply potential VDD and a ground potential GND, a first reference switch 14 connected in series with the reference oscillator 16 between the power supply potential VDD and the ground potential GND, a second reference switch 15 connected in parallel with the reference oscillator 16 between the power supply potential VDD and the ground potential GND, an operation counter 26 configured to count the number of output pulses from the operation oscillator 13 in a measurement period, and a reference counter 25 configured to count the number of output pulses from the reference oscillator 16 in the measurement period.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20170075404A1

    公开(公告)日：2017-03-16

    申请号：US15224380

    申请日：2016-07-29

    Applicant: Renesas Electronics Corporation

    Inventor： Yuko KITAJI ,  Kazuki FUKUOKA ,  Ryo MORI ,  Toshifumi UEMURA

    IPC: G06F1/32

    CPC classification number: G06F1/305 ,  G06F1/10 ,  G06F1/32 ,  G06F1/3237

    Abstract: There is provided a semiconductor device that can follow a fast voltage change such as a large voltage drop occurring at the time of rapid load fluctuation. The semiconductor device includes a voltage sensor which monitors a power supply voltage at a sampling speed higher than the assumed frequency of power supply voltage fluctuation and outputs a voltage code value, a voltage drop determination circuit which determines, from the voltage code value, that a voltage drop causing a malfunction of a system occurs, and outputs a clock stop signal, and a clock control circuit which controls clock stop, restart, and frequency change.

    Abstract translation: 提供了可以跟随快速电压变化的半导体器件，例如在快速负载波动时发生的大的电压降。 半导体装置包括：电压传感器，其以比假想电源电压波动的频率高的采样速度监视电源电压，并输出电压代码值;电压降判定电路，根据电压代码值确定： 产生导致系统故障的电压降，并输出时钟停止信号，以及控制时钟停止，重启和频率变化的时钟控制电路。

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