公开(公告)号：US20170059416A1

公开(公告)日：2017-03-02

申请号：US15198663

申请日：2016-06-30

Applicant: Renesas Electronics Corporation

Inventor： Toshiro FUJISAKI ,  Takatoshi TAMAOKI ,  Akira MURAYAMA

IPC: G01K3/08 ,  G01K1/02 ,  H03M1/12

CPC classification number: G01K3/04

Abstract: In order to provide a semiconductor integrated circuit capable of predicting its own lifetime (wear out failure) due to the aged deterioration and notifying a warning, it includes a processor, a temperature sensor, a non-volatile memory, and a comparator formed on the same semiconductor substrate. The comparator compares a temperature measured by the temperature sensor with a predetermined temperature threshold, and the non-volatile memory accumulatively holds the information (cumulative time) about a period having the temperature exceeding the temperature threshold. The semiconductor integrated circuit notifies the outward of a warning when the cumulative time having the temperature exceeding the temperature threshold exceeds a predetermined high temperature time threshold.

Abstract translation: 为了提供能够预测由于老化而导致的其自身寿命（磨损故障）的半导体集成电路和通知警报，其包括处理器，温度传感器，非易失性存储器和形成在其上的比较器 相同的半导体衬底。 比较器将由温度传感器测量的温度与预定温度阈值进行比较，并且非易失性存储器累积地保存关于温度超过温度阈值的周期的信息（累积时间）。 当温度超过温度阈值的累积时间超过预定的高温时间阈值时，半导体集成电路向外通知警告。

公开(公告)号：US20200041547A1

公开(公告)日：2020-02-06

申请号：US16595635

申请日：2019-10-08

Applicant: Renesas Electronics Corporation

Inventor： Kazuki FUKUOKA ,  Toshifumi UEMURA ,  Yuko KITAJI ,  Yosuke OKAZAKI ,  Akira MURAYAMA

IPC: G01R19/165 ,  G01R31/28 ,  G06F1/28 ,  H03K5/133 ,  H03K3/03 ,  G06F1/24 ,  G01R31/317 ,  G01R31/3177 ,  G01R31/3183 ,  G01R31/3193

Abstract: A semiconductor device, a semiconductor system, and a control method of a semiconductor device are capable of accurately monitoring the lowest operating voltage of a circuit to be monitored. According to one embodiment, a monitor unit of a semiconductor system includes a voltage monitor that is driven by a second power supply voltage different from a first power supply voltage supplied to an internal circuit that is a circuit to be monitored and monitors the first power supply voltage, and a delay monitor that is driven by the first power supply voltage and monitors the signal propagation period of time of a critical path in the internal circuit.

公开(公告)号：US20180095115A1

公开(公告)日：2018-04-05

申请号：US15704270

申请日：2017-09-14

Applicant: Renesas Electronics Corporation

Inventor： Kazuki FUKUOKA ,  Toshifumi UEMURA ,  Yuko KITAJI ,  Yosuke OKAZAKI ,  Akira MURAYAMA

IPC: G01R19/165 ,  G01R31/3193 ,  G01R31/317 ,  G01R31/3183 ,  G01R31/3177

Abstract: An object of the present invention is to provide a semiconductor device, a semiconductor system, and a control method of a semiconductor device capable of accurately monitoring the lowest operating voltage of a circuit to be monitored. According to one embodiment, a monitor unit of a semiconductor system includes a voltage monitor that is driven by a second power supply voltage different from a first power supply voltage supplied to an internal circuit that is a circuit to be monitored and monitors the first power supply voltage, and a delay monitor that is driven by the first power supply voltage and monitors the signal propagation period of time of a critical path in the internal circuit.