公开(公告)号：US20220158005A1

公开(公告)日：2022-05-19

申请号：US16950479

申请日：2020-11-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shotaro KUDO ,  Shinichi WATANUKI ,  Takashi OGURA

IPC: H01L31/0232 ,  H01L31/18

Abstract: A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.

公开(公告)号：US20230282735A1

公开(公告)日：2023-09-07

申请号：US18061766

申请日：2022-12-05

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shotaro KUDO

IPC: H01L29/739 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L29/7395 ,  H01L27/0248 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/401 ,  H01L29/41708 ,  H01L29/4941 ,  H01L29/51 ,  H01L29/66348 ,  H01L21/31111 ,  H01L21/31053 ,  H01L21/02271 ,  H01L21/32055 ,  H01L21/02236

Abstract: A semiconductor device includes an insulating layer(IFL) on a semiconductor substrate(SUB), a conductive film (PL) on the insulating layer(IFL), an interlayer insulating film(IL) covering the conductive film(PL), a contact hole(CH1) in the interlayer insulating film(IL), the conductive film(PL) and the insulating layer (IFL), and a plug(PG1) embedded in the contact hole(CH1). A side surface of the interlayer insulating film(IL) is separated from a side surface of the conductive film(PL) to expose a part of an upper surface of the conductive film(PL), and a side surface of the insulating layer(IFL) is separated from the side surface of the conductive film(PL) to expose a part of a lower surface of the conductive film(PL). A distance(L1) from the lower surface of the conductive film(PL) to the bottom of the contact hole(CH1) is longer than a distance(L2) from the side surface of the conductive film(PL) to the side surface of the interlayer insulating film(IL).