公开(公告)号：US3593193A

公开(公告)日：1971-07-13

申请号：US3593193D

申请日：1969-06-19

Applicant: RCA CORP

Inventor： CHANG KERN KO-NAN ,  LIU SHING-GONG ,  RISKO JOHN JOSEPH

IPC: H03B9/14 ,  H03B7/14

CPC classification number: H03B9/14

Abstract: A wave tuning structure including a first portion in cooperative relationship with an anomalous silicon avalanche diode, a second portion coupled to the first portion for supporting oscillations at the transit time frequency of the diode, and a third portion coupled to at least one of the first and second portions for supporting oscillations at a given frequency significantly higher than the transit time frequency, serves to provide relatively high power at the given frequency to a load coupled to the third portion of the wave tuning structure, such as 17 watts at 24 gigahertz and 28 watts at 10.5 gigahertz for instance, in response to a bias pulse being applied to the diode. A significant output power is still obtained at frequencies exceeding 33 gigahertz.

公开(公告)号：US3926693A

公开(公告)日：1975-12-16

申请号：US46476574

申请日：1974-04-29

Applicant: RCA CORP

Inventor： KAWAMOTO HIROHISA ,  PRAGER HANS JOHN ,  RISKO JOHN JOSEPH

IPC: H01L29/00 ,  H01L29/864 ,  H01L21/20 ,  H01L21/225 ,  H01L29/90

CPC classification number: H01L29/00 ,  H01L29/864 ,  Y10S148/003 ,  Y10S148/067 ,  Y10S148/151 ,  Y10S438/928 ,  Y10S438/936

Abstract: A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first outer conductivity region. The first outer conductivity region is of the same conductivity type as the n-type region but of a higher doping concentration. Contiguous to the p-type region is a second outer conductivity region. The second outer conductivity region is of the same conductivity type as the ptype region but of higher doping concentration. The p-type region and the n-type region are the active regions of the Trapatt diode and have a graded doping concentration. In addition, the active regions are in close proximity to a surface of the diode which is generally mounted in contact with a heat sink. The graded doping concentration and close proximity of the active regions to a heat sink results in a Trapatt diode with good thermal dissipation characteristics, increased power output, and a broader bandwidth.

公开(公告)号：US3600649A

公开(公告)日：1971-08-17

申请号：US3600649D

申请日：1969-06-12

Applicant: RCA CORP

Inventor： LIU SHING-GONG ,  RISKO JOHN JOSEPH

IPC: F01C19/00 ,  H01L21/00 ,  H01L29/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  F01C19/005 ,  H01L29/00 ,  Y10S148/098 ,  Y10S438/936

Abstract: A high power avalanche diode includes a substrate of N+-type semiconductor material having an epitaxial layer of a semiconductor material on a surface thereof. The epitaxial layer includes an N-type region adjacent the surface of the substrate and a P-type region over the N-type region forming a PN junction therebetween. The N-type region is at least 3 microns thick and is of uniform carrier concentration. The P-type region has a graded carrier concentration which increases from the PN junction to the surface of the epitaxial layer. The avalanche diode is made by epitaxially forming a layer of Ntype semiconductor material on the surface of a substrate of N+type semiconductor material. A source of P-type dopant material is provided on the surface of the epitaxial layer. The P-type dopant material is diffused into the epitaxial layer to a distance which is spaced from the substrate not less than 3 microns and so as to provide the graded carrier concentration in the resultant P-type region.