公开(公告)号：US3926693A

公开(公告)日：1975-12-16

申请号：US46476574

申请日：1974-04-29

Applicant: RCA CORP

Inventor： KAWAMOTO HIROHISA ,  PRAGER HANS JOHN ,  RISKO JOHN JOSEPH

IPC: H01L29/00 ,  H01L29/864 ,  H01L21/20 ,  H01L21/225 ,  H01L29/90

CPC classification number: H01L29/00 ,  H01L29/864 ,  Y10S148/003 ,  Y10S148/067 ,  Y10S148/151 ,  Y10S438/928 ,  Y10S438/936

Abstract: A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first outer conductivity region. The first outer conductivity region is of the same conductivity type as the n-type region but of a higher doping concentration. Contiguous to the p-type region is a second outer conductivity region. The second outer conductivity region is of the same conductivity type as the ptype region but of higher doping concentration. The p-type region and the n-type region are the active regions of the Trapatt diode and have a graded doping concentration. In addition, the active regions are in close proximity to a surface of the diode which is generally mounted in contact with a heat sink. The graded doping concentration and close proximity of the active regions to a heat sink results in a Trapatt diode with good thermal dissipation characteristics, increased power output, and a broader bandwidth.

公开(公告)号：US3683298A

公开(公告)日：1972-08-08

申请号：US3683298D

申请日：1971-03-31

Applicant: RCA CORP

Inventor： KAWAMOTO HIROHISA

IPC: H03B9/14 ,  H03B7/06

CPC classification number: H03B9/143

Abstract: The terminals of a first avalanche diode are shunt coupled to a microwave transmission line. The terminals of opposite polarity of at least one other avalanche diode are also shunt coupled to the microwave transmission line. Complementary microwave circuitry and proper location within a suitable microwave resonant circuit enables the multiple avalanche diodes to operate in the anomalous mode in an oscillator, amplifier, or frequency multiplier when reversed biased by an appropriate signal.

Abstract translation: 第一雪崩二极管的端子分流耦合到微波传输线。 至少另一个雪崩二极管的相反极性的端子也分流耦合到微波传输线。 互补微波电路和合适的微波谐振电路内的适当位置使得多个雪崩二极管能够在由适当的信号反向偏置时在振荡器，放大器或倍频器中以异常模式工作。