公开(公告)号：US10832984B2

公开(公告)日：2020-11-10

申请号：US16743345

申请日：2020-01-15

申请人： Qorvo US, Inc.

发明人： Christo Bojkov ,  Andrew Ketterson ,  Robert Charles Dry

IPC分类号： H01L23/29 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

摘要： A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

公开(公告)号：US20180122716A1

公开(公告)日：2018-05-03

申请号：US15797310

申请日：2017-10-30

申请人： Qorvo US, Inc.

发明人： Christo Bojkov ,  Andrew Ketterson ,  Robert Charles Dry

IPC分类号： H01L23/29 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31

摘要： A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

公开(公告)号：US11699629B2

公开(公告)日：2023-07-11

申请号：US17213974

申请日：2021-03-26

申请人： Qorvo US, Inc.

发明人： Anthony Chiu ,  Bror Peterson ,  Andrew Ketterson

IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L25/18 ,  H01L23/48 ,  H01L23/66 ,  H01L23/00 ,  H01L49/02

CPC分类号： H01L23/367 ,  H01L23/3736 ,  H01L23/3738 ,  H01L23/481 ,  H01L23/66 ,  H01L24/29 ,  H01L24/32 ,  H01L25/18 ,  H01L28/90 ,  H01L2223/6683 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32265

摘要： The disclosure is directed to an integrated circuit (IC) die stacked with a backer die, including capacitors and thermal vias. The backer die includes a substrate material to contain and electrically insulate one or more capacitors at a back of the IC die. The backer die further includes a thermal material that is more thermally conductive than the substrate material for thermal spreading and increased heat dissipation. In particular, the backer die electrically couples capacitors to the IC die in a stacked configuration while also spreading and dissipating heat from the IC die. Such a configuration reduces an overall footprint of the electronic device, resulting in decreased integrated circuits (IC) packages and module sizes. In other words, instead of placing the capacitors next to the IC die, the capacitors are stacked on top of the IC die, thereby reducing an overall surface area of the package.

公开(公告)号：US20200152533A1

公开(公告)日：2020-05-14

申请号：US16743345

申请日：2020-01-15

申请人： Qorvo US, Inc.

发明人： Christo Bojkov ,  Andrew Ketterson ,  Robert Charles Dry

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

摘要： A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

公开(公告)号：US20220310471A1

公开(公告)日：2022-09-29

申请号：US17213974

申请日：2021-03-26

申请人： Qorvo US, Inc.

发明人： Anthony Chiu ,  Bror Peterson ,  Andrew Ketterson

IPC分类号： H01L23/367 ,  H01L25/18 ,  H01L23/48 ,  H01L23/66 ,  H01L23/373 ,  H01L49/02 ,  H01L23/00

摘要： The disclosure is directed to an integrated circuit (IC) die stacked with a backer die, including capacitors and thermal vias. The backer die includes a substrate material to contain and electrically insulate one or more capacitors at a back of the IC die. The backer die further includes a thermal material that is more thermally conductive than the substrate material for thermal spreading and increased heat dissipation. In particular, the backer die electrically couples capacitors to the IC die in a stacked configuration while also spreading and dissipating heat from the IC die. Such a configuration reduces an overall footprint of the electronic device, resulting in decreased integrated circuits (IC) packages and module sizes. In other words, instead of placing the capacitors next to the IC die, the capacitors are stacked on top of the IC die, thereby reducing an overall surface area of the package.

公开(公告)号：US10651103B2

公开(公告)日：2020-05-12

申请号：US15797310

申请日：2017-10-30

申请人： Qorvo US, Inc.

发明人： Christo Bojkov ,  Andrew Ketterson ,  Robert Charles Dry

IPC分类号： H01L23/29 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

摘要： A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.