INTEGRATED CIRCUIT (IC) CHIP WITH BUMP INTERCONNECTS EACH HAVING MULTIPLE CONTACT AREAS, RELATED IC PACKAGES, AND METHODS OF FABRICATION

    公开(公告)号:US20240387429A1

    公开(公告)日:2024-11-21

    申请号:US18318691

    申请日:2023-05-16

    Abstract: Underfill and bump interconnects in a circuit package expand at different rates during a thermal reflow process, causing stress at one end of a bump interconnect that couples to a metal pad. A bump interconnect having multiple isolated areas of contact between a conductive pillar and the metal pad, rather than a single larger continuous contact area, distributes the concentration of stresses to reduce the peak stress, which reduces the chances of damage due to stress occurring between the metal pad and the conductive pillar or in a dielectric layer adjacent to the metal pad. In some examples, before formation of the conductive pillar, a passivation layer is disposed in a pattern on the metal pad with openings in which a plurality of surfaces of the second end of the conductive pillar contact the metal pad.

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