Closed loop bank selection for temperature compensation in wireless systems
    1.
    发明授权
    Closed loop bank selection for temperature compensation in wireless systems 有权
    无线系统温度补偿的闭环选择

    公开(公告)号:US09503107B1

    公开(公告)日:2016-11-22

    申请号:US14885690

    申请日:2015-10-16

    Abstract: The disclosure is directed to compensating for frequency drift in a voltage-controlled oscillator (VCO). Example methods and systems are described which may detect a signal edge associated with a transceiver, and determine whether one or more lock quality signals indicate that the VCO frequency is outside of an specified range, indicating an unacceptable amount of frequency drift. A frequency tuning setting of the VCO may be adjusted based on the one or more lock quality signals, and a determination may be made whether or not the one or more lock quality signals indicate that the VCO frequency has returned to the specified range. The adjustment of the frequency tuning setting of the VCO may be repeated until the VCO frequency returns to the specified range.

    Abstract translation: 本公开旨在补偿压控振荡器(VCO)中的频率漂移。 描述了可以检测与收发器相关联的信号边缘的示例方法和系统,并且确定一个或多个锁定质量信号是否指示VCO频率在指定范围之外,指示不可接受的频率漂移量。 可以基于一个或多个锁定质量信号来调整VCO的频率调谐设置,并且可以确定一个或多个锁定质量信号是否指示VCO频率已经返回到指定的范围。 可以重复VCO的频率调谐设置的调整,直到VCO频率返回到指定的范围。

    Layout for voltage-controlled oscillator (VCO)

    公开(公告)号:US10749468B1

    公开(公告)日:2020-08-18

    申请号:US16418709

    申请日:2019-05-21

    Abstract: Certain aspects relate to a semiconductor die. The semiconductor die includes a voltage-controlled oscillator (VCO), wherein the VCO includes a resonant capacitor, and a resonant inductor coupled in parallel with the resonant capacitor. The resonant inductor includes a first elongated portion and a second elongated portion that are parallel with each other. The semiconductor die also includes a voltage supply line configured to route a supply voltage to the VCO, wherein the voltage supply line includes a first portion that runs parallel with the first and second elongated portions of the resonant inductor and is located between the first and second elongated portions of the resonant inductor.

Patent Agency Ranking