公开(公告)号：US09773567B1

公开(公告)日：2017-09-26

申请号：US15439086

申请日：2017-02-22

Applicant: QUALCOMM Incorporated

Inventor： Zhongze Wang ,  Guoqing Chen ,  Paul Hoayun

IPC: G11C16/10 ,  G11C16/34

CPC classification number: G11C16/3427 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3422

Abstract: A method and apparatus for balancing voltage stress at a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory array is disclosed. A particular cell of the SONOS flash memory array is selected for programming. A first voltage stress associated with a first SONOS transistor is determined if the particular cell is programmed. The first SONOS transistor is included in a first unselected cell of the SONOS flash memory array. A second voltage stress associated with a second SONOS transistor is determined if the particular cell is programmed. The first voltage stress and the second voltage stress are balanced prior to programming the particular cell.