公开(公告)号：US20180357966A1

公开(公告)日：2018-12-13

申请号：US15616630

申请日：2017-06-07

Applicant: QUALCOMM Incorporated

Inventor： Jia Wei Ma ,  Heesun Shin ,  Wei Hsiang Weng ,  Cheonhong Kim ,  Jan Bos

IPC: G09G3/3291 ,  G09G3/3266

CPC classification number: G09G3/3291 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0823 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043 ,  G09G2320/045

Abstract: This disclosure provides systems, methods and apparatus for OLED control circuits. In some implementations, the OLED control circuit can be configured to reverse the bias of the OLED without the use of a dedicated initialization voltage. A low voltage data signal applied on a data line can be used to drain voltage from the anode of the OLED through a diode-connected transistor. A high voltage data signal applied on the same data line can be used to store a reference voltage on a storage capacitor, where the reference voltage is also a function of the threshold voltage of a driving transistor of the OLED control circuit. The stored reference voltage can be used to compensate for the threshold voltage of the driving transistor when the OLED is energized by a current, so that the current is independent of the threshold voltage of the driving transistor.

公开(公告)号：US10276105B2

公开(公告)日：2019-04-30

申请号：US15616630

申请日：2017-06-07

Applicant: QUALCOMM Incorporated

Inventor： Jia Wei Ma ,  Heesun Shin ,  Wei Hsiang Weng ,  Cheonhong Kim ,  Jan Bos

IPC: G09G3/3291 ,  G09G3/3266 ,  G09G3/3233 ,  G09G3/3258

Abstract: This disclosure provides systems, methods and apparatus for OLED control circuits. In some implementations, the OLED control circuit can be configured to reverse the bias of the OLED without the use of a dedicated initialization voltage. A low voltage data signal applied on a data line can be used to drain voltage from the anode of the OLED through a diode-connected transistor. A high voltage data signal applied on the same data line can be used to store a reference voltage on a storage capacitor, where the reference voltage is also a function of the threshold voltage of a driving transistor of the OLED control circuit. The stored reference voltage can be used to compensate for the threshold voltage of the driving transistor when the OLED is energized by a current, so that the current is independent of the threshold voltage of the driving transistor.

公开(公告)号：US10162311B2

公开(公告)日：2018-12-25

申请号：US15154774

申请日：2016-05-13

Applicant: QUALCOMM Incorporated

Inventor： John Hong ,  Jan Bos ,  Yi-Nan Chu ,  Cheonhong Kim

IPC: G04G17/04 ,  G04G9/00 ,  G04G9/10 ,  G04G9/12 ,  G02F1/1345 ,  H05K1/14 ,  G04G17/06

Abstract: A device includes a substrate with a curvilinear perimeter segment adjoined to a plurality of facets, a display area, a border area surrounding the display area, and connection pads, divided into groups corresponding to the facets, in the border area. A flexible circuit board with arms coupled to the groups of connection pads is included. Another device includes a substrate having a display area, first connection pads within a border area peripheral to the display area, and a flexible circuit board having a first portion including second connection pads configured to be coupled to the first connection pads, and a second portion configured to accommodate a plurality of transmission lines extending from the second connection pads. An arc length of the first portion can be greater than that of the second portion and a center-to-center pitch of the second connection pads can be greater than that of the transmission lines.

公开(公告)号：US20170287943A1

公开(公告)日：2017-10-05

申请号：US15136785

申请日：2016-04-22

Applicant: Qualcomm Incorporated

Inventor： Jia Wei Ma ,  Wei Hsiang Weng ,  Jan Bos ,  Cheonhong Kim

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/477 ,  H01L21/46 ,  G09G3/20 ,  H01L29/22 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L49/02 ,  H01L29/24

CPC classification number: H01L27/127 ,  G09G3/2092 ,  G09G2300/08 ,  G09G2310/0264 ,  G09G2330/028 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/46 ,  H01L21/477 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869

Abstract: This disclosure provides apparatuses and methods of manufacturing apparatuses including thin film transistors (TFTs) and storage capacitors. An apparatus can include a substrate, a TFT, a storage capacitor adjacent to the TFT, and a common electrode. The storage capacitor can be substantially transparent to increase aperture ratio of a display device. The storage capacitor can include an insulating layer between a first transparent electrode and a second transparent electrode. The TFT can include a gate electrode, a gate insulating layer, an oxide semiconductor, source and drain electrodes, and a dielectric layer. The oxide semiconductor can be formed out of the same layer as the first transparent electrode, and the common electrode can be formed out of the same layer as the oxide semiconductor or the source and drain electrodes.

公开(公告)号：US20170168463A1

公开(公告)日：2017-06-15

申请号：US15154774

申请日：2016-05-13

Applicant: QUALCOMM Incorporated

Inventor： John Hong ,  Jan Bos ,  Yi-Nan Chu ,  Cheonhong Kim

IPC: G04G17/04 ,  G04G9/12 ,  G04G9/10 ,  G04G9/00

CPC classification number: G04G17/045 ,  G02F1/1345 ,  G02F2201/56 ,  G04G9/0064 ,  G04G9/10 ,  G04G9/12 ,  G04G17/06 ,  H05K1/148 ,  H05K2201/052 ,  H05K2201/053 ,  H05K2201/056 ,  H05K2201/10128

Abstract: A device includes a substrate with a curvilinear perimeter segment adjoined to a plurality of facets, a display area, a border area surrounding the display area, and connection pads, divided into groups corresponding to the facets, in the border area. A flexible circuit board with arms coupled to the groups of connection pads is included. Another device includes a substrate having a display area, first connection pads within a border area peripheral to the display area, and a flexible circuit board having a first portion including second connection pads configured to be coupled to the first connection pads, and a second portion configured to accommodate a plurality of transmission lines extending from the second connection pads. An arc length of the first portion can be greater than that of the second portion and a center-to-center pitch of the second connection pads can be greater than that of the transmission lines.