Techniques for reducing rock bottom leakage in memory

    公开(公告)号:US11170845B1

    公开(公告)日:2021-11-09

    申请号:US16928658

    申请日:2020-07-14

    Abstract: Certain aspects of the present disclosure are directed to a memory system. The memory system generally includes a word line (WL) driver circuit comprising a transistor coupled between a WL of a memory and a reference potential node. The memory system also includes a clamping circuit having logic configured to generate a control signal to drive a gate of the transistor such that the control signal is floating when the first head switch is open, and a first head switch coupled between a voltage rail and a supply input of the logic.

    Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths

    公开(公告)号:US09941881B1

    公开(公告)日:2018-04-10

    申请号:US15467943

    申请日:2017-03-23

    Abstract: A latch circuit includes an AND-NOR gate, a NAND gate, and a NOR gate. The AND-NOR gate includes a first AND-input configured to receive input data and a second AND-input coupled to an output of the NAND gate. The AND-NOR gate includes a NOR-input coupled to an output of the NOR gate, and an output configured to generate output data. The NAND gate includes a first input coupled to the output of the AND-NOR gate and a second input configured to receive a clock signal. The NOR gate includes a first input coupled to the output of the AND-NOR gate and a second input configured to receive a complementary clock signal. During a first half clock cycle, the AND-NOR gate passes the data from the input to the output. During a second half clock cycle, the feedback configuration of the AND-NOR gate and the NOR gate latches the data.

    Memory circuit architecture
    4.
    发明授权

    公开(公告)号:US11600307B2

    公开(公告)日:2023-03-07

    申请号:US17136616

    申请日:2020-12-29

    Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

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