公开(公告)号：US20190027554A1

公开(公告)日：2019-01-24

申请号：US15816295

申请日：2017-11-17

Applicant: QUALCOMM Incorporated

Inventor： Ye LU ,  Yun YUE ,  Phanikumar KONKAPAKA ,  Bin YANG ,  Chuan-Hsing CHEN

IPC: H01L29/06 ,  H01L23/522

Abstract: A metal-oxide-semiconductor (MOS) device for radio frequency (RF) applications may include a guard ring. The guard ring may surround the MOS device and at least one other MOS device. The MOS device may further include a level zero contact layer coupled to a first interconnect layer through level zero interconnects and vias. The first interconnect layer may be for routing to the MOS device.

公开(公告)号：US20190393359A1

公开(公告)日：2019-12-26

申请号：US16119914

申请日：2018-08-31

Applicant: QUALCOMM Incorporated

Inventor： Chuan-Hsing CHEN ,  Chuan-cheng CHENG ,  Yun YUE ,  Ye LU

IPC: H01L29/93 ,  H01L29/66 ,  H01L21/225

Abstract: A metal oxide semiconductor (MOS) varactor includes a first diffusion region of a first polarity and a second diffusion region of the first polarity on a semiconductor substrate. The MOS varactor further includes a channel between the first diffusion region and the second diffusion region on the semiconductor substrate. The channel has a surface dopant concentration less than 4 e1017.

公开(公告)号：US20180366592A1

公开(公告)日：2018-12-20

申请号：US15686827

申请日：2017-08-25

Applicant: QUALCOMM Incorporated

Inventor： Ye LU ,  Yun YUE ,  Chuan-Hsing CHEN ,  Bin YANG ,  Lixin GE ,  Ken LIAO

IPC: H01L29/93 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45

CPC classification number: H01L29/93 ,  H01L23/4824 ,  H01L23/485 ,  H01L23/66 ,  H01L29/4232 ,  H01L29/456 ,  H01L29/66174 ,  H01L29/66181

Abstract: A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.