公开(公告)号：US11875864B2

公开(公告)日：2024-01-16

申请号：US17499571

申请日：2021-10-12

申请人： PetaIO Inc.

发明人： Naveen Kumar ,  Chengxu Zhang ,  Seok Lee ,  LingQi Zeng

IPC分类号： G11C16/34 ,  G11C16/10 ,  G11C29/42 ,  G11C16/28 ,  G11C16/06

CPC分类号： G11C16/3495 ,  G11C16/06 ,  G11C16/102 ,  G11C16/28 ,  G11C29/42

摘要： A storage device includes 3D NAND including layers of multi-level cells. When a shutdown command is received, whether a block is partially written is evaluated. If so, dummy lines are written after the last written wordline of the block. Partially written blocks may be those having a fill percentage less than a threshold. The threshold may be a function of the PEC count of the block. If a maximum retention time is exceeded by data stored in a partially written block, dummy lines may also be written to the block.

公开(公告)号：US20230115979A1

公开(公告)日：2023-04-13

申请号：US17499571

申请日：2021-10-12

申请人： PetaIO Inc.

发明人： Naveen Kumar ,  Chengxu Zhang ,  Seok Lee ,  LingQi Zeng

IPC分类号： G11C16/34 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28 ,  G11C29/42

摘要： A storage device includes 3D NAND including layers of multi-level cells. When a shutdown command is received, whether a block is partially written is evaluated. If so, dummy lines are written after the last written wordline of the block. Partially written blocks may be those having a fill percentage less than a threshold. The threshold may be a function of the PEC count of the block. If a maximum retention time is exceeded by data stored in a partially written block, dummy lines may also be written to the block.