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公开(公告)号:US20230352109A1
公开(公告)日:2023-11-02
申请号:US17909490
申请日:2021-01-26
CPC分类号: G11C19/0841 , H10N50/10 , G11C11/161 , H10N52/80 , H10N50/85 , H03K19/18
摘要: A spin-based logic architecture provides nonvolatile data retention, near-zero leakage, and scalability. The architecture based on magnetic domain-walls take advantage of fast domain-wall motion, high density, non-volatility, and flexible design in order to process and store information. There is disclosed a concept to perform all-electric logic operations and cascading in domain-wall racetracks. The novel system exploits chiral coupling between neighboring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction to realize a domain-wall inverter. There are described reconfigurable NAND and NOR logic gates that perform operations with current-induced domain-wall motion. Several NAND gates are cascaded to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. The novel system provides a viable platform for scalable all-electric magnetic logic and paves the way for memory-in-logic applications.