CURRENT-DRIVEN MAGNETIC DOMAIN-WALL LOGIC
    1.
    发明公开

    公开(公告)号:US20230352109A1

    公开(公告)日:2023-11-02

    申请号:US17909490

    申请日:2021-01-26

    摘要: A spin-based logic architecture provides nonvolatile data retention, near-zero leakage, and scalability. The architecture based on magnetic domain-walls take advantage of fast domain-wall motion, high density, non-volatility, and flexible design in order to process and store information. There is disclosed a concept to perform all-electric logic operations and cascading in domain-wall racetracks. The novel system exploits chiral coupling between neighboring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction to realize a domain-wall inverter. There are described reconfigurable NAND and NOR logic gates that perform operations with current-induced domain-wall motion. Several NAND gates are cascaded to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. The novel system provides a viable platform for scalable all-electric magnetic logic and paves the way for memory-in-logic applications.