Solid-state imaging apparatus and method of driving the same

    公开(公告)号:US12177585B2

    公开(公告)日:2024-12-24

    申请号:US18212037

    申请日:2023-06-20

    Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor.

    Imaging device
    2.
    发明授权

    公开(公告)号:US12120448B2

    公开(公告)日:2024-10-15

    申请号:US17683465

    申请日:2022-03-01

    CPC classification number: H04N25/778 H04N25/60 H04N25/772

    Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

    Solid-state imaging apparatus and method of driving the same

    公开(公告)号:US10897590B2

    公开(公告)日:2021-01-19

    申请号:US16178396

    申请日:2018-11-01

    Abstract: An imaging device includes a photoelectric converter generating signal charge; a charge storage region storing the signal charge; a first transistor having a gate coupled to the charge storage region; a second transistor having a source and a drain; and voltage supply circuitry supplying voltages varying with time. An output of the first transistor is fed back to the second transistor and is supplied to the charge storage region. A reset operation for discharging the signal charge in the charge storage region includes a first reset operation and a second reset operation. In the first reset operation, the second transistor changes from an OFF state to an ON state and then changes to an OFF state. In the second reset operation, the voltage supply circuitry supplies the voltages to a gate of the second transistor so that the second transistor gradually changes from an OFF state to an ON state.

    Photodetector
    7.
    发明授权

    公开(公告)号:US11888003B2

    公开(公告)日:2024-01-30

    申请号:US17039128

    申请日:2020-09-30

    CPC classification number: H01L27/1461 H01L27/14603 H01L27/14643 H04N25/75

    Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

    Solid-state imaging device
    9.
    发明授权

    公开(公告)号:US10553639B2

    公开(公告)日:2020-02-04

    申请号:US16109473

    申请日:2018-08-22

    Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

    IMAGING SYSTEM, AND METHOD FOR SPECIFYING UV EMISSION LOCATION USING SAME

    公开(公告)号:US20200018641A1

    公开(公告)日:2020-01-16

    申请号:US16577311

    申请日:2019-09-20

    Abstract: An imaging system includes: an image sensor sensitive to ultraviolet light and visible light; a lens configured to focus light from a subject onto the image sensor; and an image processor configured to process image signals output from the image sensor. The image processor obtains the difference between image signals A1 and A2 output from the image sensor at times t1 and t2, respectively. If the differential signal A3 is greater than or equal to a predetermined value, the image processor determines that light from the subject contains the ultraviolet light, and generates an image signal CI based on the differential signal A3.

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