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公开(公告)号：US11204421B2
公开(公告)日：2021-12-21
申请号：US16040624
申请日：2018-07-20
Inventor： Akito Inoue , Masato Takemoto , Shinzo Koyama , Motonori Ishii , Shigeru Saitou
IPC: G01S17/14 , G01S7/487 , G01S17/10 , G01S17/36 , G01S7/4865 , G01S17/04 , G01S17/18 , G01S17/86 , G01S17/894 , G01S7/4863 , G01S7/497
Abstract: A distance measuring device includes a controller and a distance calculator. The controller sets, in a first time period, a first measurement time range corresponding to a first measurement distance range; causes a light emitter to emit light and places a light receiver into an exposure state, in the first measurement time range; sets, in a second time period, a second measurement time range corresponding to a second measurement distance range; and causes the light emitter to emit light and places the light receiver into an exposure state, in the second measurement time range. At least one measurement condition is different between the first and second time periods. The distance calculator calculates the distance from the distance measuring device to a measurement target, based on the time from the emission to the reflection of light. The time is in at least one of the first and second time periods.
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公开(公告)号：US20210005646A1
公开(公告)日：2021-01-07
申请号：US17026864
申请日：2020-09-21
Inventor： Yuki Sugiura , Akito Inoue
IPC: H01L27/146
Abstract: A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.
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公开(公告)号：US12080729B2
公开(公告)日：2024-09-03
申请号：US17479847
申请日：2021-09-20
Inventor： Akito Inoue
IPC: H01L27/146
CPC classification number: H01L27/14605 , H01L27/1461 , H01L27/14623 , H01L27/14643 , H01L27/14685 , H01L27/14689
Abstract: A photodetector includes a first APD that is sensitive to incident light and a second APD through which a constant current flows regardless of the incident light. One terminal of the first APD is electrically connected to one terminal of the second APD, another terminal of the first APD and another terminal of the second APD are connected to different power supplies, respectively, and the one terminal of the first APD and the one terminal of the second APD are both anodes or cathodes.
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公开(公告)号：US11889215B2
公开(公告)日：2024-01-30
申请号：US17486495
申请日：2021-09-27
Inventor： Tatsuya Kabe , Hideyuki Arai , Hisashi Aikawa , Yuki Sugiura , Akito Inoue , Mitsuyoshi Mori , Kentaro Nakanishi , Yusuke Sakata
IPC: H04N25/75 , H01L27/146 , H04N25/766
CPC classification number: H04N25/75 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N25/766
Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.
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公开(公告)号：US11888003B2
公开(公告)日：2024-01-30
申请号：US17039128
申请日：2020-09-30
Inventor： Akito Inoue , Yuki Sugiura , Yutaka Hirose
IPC: H01L27/146 , H04N25/75
CPC classification number: H01L27/1461 , H01L27/14603 , H01L27/14643 , H04N25/75
Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.
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Patent Agency Ranking
公开(公告)号：US11860033B2
公开(公告)日：2024-01-02
申请号：US18111131
申请日：2023-02-17
Inventor： Akito Inoue , Mitsuyoshi Mori , Yusuke Sakata , Motonori Ishii
IPC: H01L31/107 , G01J1/44 , H03K17/687
CPC classification number: G01J1/44 , H03K17/6872 , G01J2001/4466
Abstract: A photodetector includes: at least one avalanche photodiode including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.
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公开(公告)号：US12088946B2
公开(公告)日：2024-09-10
申请号：US17679942
申请日：2022-02-24
Inventor： Shota Yamada , Shigetaka Kasuga , Motonori Ishii , Akito Inoue , Yutaka Hirose
IPC: H04N25/778 , G01S7/481 , G01S7/4865 , G01S17/894 , H04N25/771
CPC classification number: H04N25/778 , G01S7/4816 , G01S7/4865 , G01S17/894 , H04N25/771
Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.
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公开(公告)号：US11330205B2
公开(公告)日：2022-05-10
申请号：US17183213
申请日：2021-02-23
Inventor： Akito Inoue , Yutaka Hirose , Seiji Yamahira
IPC: H04N5/355 , H04N5/369 , H04N5/378 , H01L27/146 , H01L31/107
Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.
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公开(公告)号：US12113078B2
公开(公告)日：2024-10-08
申请号：US17479835
申请日：2021-09-20
Inventor： Akito Inoue , Yuki Sugiura , Yutaka Hirose
IPC: H01L27/146 , H04N25/75
CPC classification number: H01L27/1461 , H01L27/14603 , H01L27/14643 , H04N25/75
Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.
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公开(公告)号：US12080733B2
公开(公告)日：2024-09-03
申请号：US17026864
申请日：2020-09-21
Inventor： Yuki Sugiura , Akito Inoue
IPC: H01L27/146 , H01L31/107
CPC classification number: H01L27/1461 , H01L27/14603 , H01L27/14643 , H01L31/107
Abstract: A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.
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