PHOTOVOLTAIC DEVICE
    2.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号:US20160225929A1

    公开(公告)日:2016-08-04

    申请号:US15095530

    申请日:2016-04-11

    Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

    Abstract translation: 光电转换装置包括具有第一表面和第二表面的晶体半导体衬底和形成在晶体半导体衬底的第一表面上的第一非晶半导体层。 晶体半导体衬底和第一非晶半导体层之间的界面是含有浓度为1×1021 / cm3或更大的氧的氧化界面。 第一非晶半导体层包括在距离氧化界面5nm以下的范围内氧浓度为1×1020 / cm3以上且1×1021 / cm3以下的高氧浓度区域。

    SOLAR CELL
    5.
    发明申请
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号:US20150372166A1

    公开(公告)日:2015-12-24

    申请号:US14838560

    申请日:2015-08-28

    CPC classification number: H01L31/02363 H01L31/0747 Y02E10/50

    Abstract: An embodiment of a solar cell is provided comprising a silicon substrate, on a first surface of which a texture structure including mountain portions and valley portions is formed, and an amorphous silicon layer provided on the first surface of the silicon substrate. The texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other. The valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller. The amorphous silicon layer includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion is thicker than that on a region other than the valley portion.

    Abstract translation: 提供了一种太阳能电池的实施例,其包括硅衬底,其第一表面上形成有山形部分和谷部分的纹理结构,以及设置在硅衬底的第一表面上的非晶硅层。 在穿过山部和谷部的横截面中的纹理结构包括成对的倾斜部分,每对倾斜部分倾斜以从一对相邻的山部分朝向其间的谷部分延伸,同时彼此靠近 。 位于倾斜部之间的谷部为圆形,曲率半径为150nm以下。 非晶硅层包括从谷部生长的外延生长区域,谷部上的外延生长区域比除谷部以外的区域厚。

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