公开(公告)号：US20160233368A1

公开(公告)日：2016-08-11

申请号：US15131033

申请日：2016-04-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akiyoshi OGANE

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/0747 ,  H01L31/022466 ,  H01L31/035281 ,  Y02E10/50

Abstract: A solar cell includes: an n-type crystalline silicon substrate having a first major surface and a second major surface opposite the first major surface; an n-type amorphous silicon film on a first major surface side; and a p-type amorphous silicon film on a second major surface side, wherein the n-type amorphous silicon film has a tapered region which tapers toward an edge of the n-type amorphous silicon film in a manner that a thickness of the edge in a planar direction of the n-type amorphous silicon film is less than a thickness of a central portion of the n-type amorphous silicon film in the planar direction.

Abstract translation: 太阳能电池包括：具有第一主表面和与第一主表面相对的第二主表面的n型晶体硅衬底; 在第一主表面侧的n型非晶硅膜; 以及第二主表面侧的p型非晶硅膜，其中所述n型非晶硅膜具有朝向所述n型非晶硅膜的边缘逐渐变细的锥形区域， n型非晶硅膜的平面方向小于n型非晶硅膜在平面方向上的中心部分的厚度。

公开(公告)号：US20160225929A1

公开(公告)日：2016-08-04

申请号：US15095530

申请日：2016-04-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akiyoshi OGANE ,  Yasufumi TSUNOMURA

IPC: H01L31/0376 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/20

CPC classification number: H01L31/03762 ,  H01L31/022425 ,  H01L31/03682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract translation: 光电转换装置包括具有第一表面和第二表面的晶体半导体衬底和形成在晶体半导体衬底的第一表面上的第一非晶半导体层。 晶体半导体衬底和第一非晶半导体层之间的界面是含有浓度为1×1021 / cm3或更大的氧的氧化界面。 第一非晶半导体层包括在距离氧化界面5nm以下的范围内氧浓度为1×1020 / cm3以上且1×1021 / cm3以下的高氧浓度区域。