公开(公告)号：US20160336464A1

公开(公告)日：2016-11-17

申请号：US15220394

申请日：2016-07-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masato SHIGEMATSU ,  Naofumi HAYASHI

IPC: H01L31/0224 ,  H01L31/20

CPC classification number: H01L31/022441 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the back surface; a second-conductivity-type second semiconductor layer on the back surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer in a boundary region between a first-conductivity-type region of the first semiconductor layer and a second-conductivity-type region of the second semiconductor layer. The insulating layer has an inclined side surface adjacent the second-conductivity-type region inclined such that the thickness of the insulating layer decreases with decreasing distance from the second-conductivity-type region. The width of the inclined surface in a direction perpendicular to the thickness direction of the insulating layer and toward the second-conductivity-type region is 10 to 300 times the thickness of the insulating layer in a region excluding the inclined surface.

Abstract translation: 太阳能电池包括：具有受光面和背面的半导体基板; 背面上的第一导电型第一半导体层; 位于背面的第二导电型第二半导体层; 电连接到第一半导体层的第一电极; 电连接到第二半导体层的第二电极; 以及在第一半导体层的第一导电型区域和第二半导体层的第二导电型区域之间的边界区域中的绝缘层。 绝缘层具有与第二导电类型区域相邻的倾斜侧表面，使得绝缘层的厚度随着与第二导电类型区域的距离的减小而减小。 倾斜表面在与绝缘层的厚度方向垂直的方向上朝向第二导电型区域的宽度为不包括倾斜表面的区域中绝缘层的厚度的10至300倍。

公开(公告)号：US20180033898A1

公开(公告)日：2018-02-01

申请号：US15716361

申请日：2017-09-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masato SHIGEMATSU ,  Yasufumi TSUNOMURA

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/022425 ,  H01L31/0224 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0445 ,  H01L31/05 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/50

Abstract: A solar cell includes: a first semiconductor layer provided in a first area on a principal surface; an insulating layer provided on the first semiconductor layer in an insulating area adjacent to a second area; a second semiconductor layer provided to extend across the principal surface in the second area and the insulating layer in the insulating area; a transparent conductive layer provided on the first semiconductor layer and the second semiconductor layer; a first metal electrode provided in the first area; and a second metal electrode provided in the second area. The second metal electrode is formed to have an overhanging portion projecting to approach the first metal electrode with increasing distance from the principal surface and such that a gap from the first metal electrode is positioned in the insulating area. The transparent conductive layer is provided to avoid an isolation area aligned with the gap.

公开(公告)号：US20160268470A1

公开(公告)日：2016-09-15

申请号：US15164874

申请日：2016-05-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naofumi HAYASHI ,  Mitsuaki MORIGAMI ,  Masato SHIGEMATSU ,  Takahiro MISHIMA

IPC: H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/202 ,  H01L31/022441 ,  H01L31/022491 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.

Abstract translation: 太阳能电池制造方法包括：在半导体衬底的主表面上形成一种导电类型的第一非晶半导体层; 在所述第一非晶半导体层上形成绝缘层; 蚀刻以在预定的第一区域中去除绝缘层和第一非晶半导体层; 在蚀刻之后在绝缘层上形成另一种导电类型的第二非晶半导体层，另一种导电类型不同于一种导电类型; 以及蚀刻以在预定的第二区域去除所述第二非晶半导体层，其中在预定的第一区域中去除所述绝缘层和所述第一非晶半导体层的所述蚀刻包括：在所述预定的第一区域中的所述绝缘层上施加蚀刻浆料; 并使用蚀刻膏蚀刻以除去预定的第一区域中的绝缘层和第一非晶半导体层。