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公开(公告)号:US20160197210A1
公开(公告)日:2016-07-07
申请号:US15072903
申请日:2016-03-17
Inventor: Naofumi HAYASHI , Takahiro MISHIMA , Tsuyoshi TAKAHAMA , Tsutomu YAMAGUCHI
IPC: H01L31/0224
CPC classification number: H01L31/022458 , H01L31/022441 , H01L31/03529 , H01L31/048 , H01L31/0516 , H01L31/0747 , Y02E10/50
Abstract: A solar cell includes: a base substrate that has a principle surface; a first semiconductor layer provided in a first region on the principle surface; a second semiconductor layer provided in a second region on the principle surface; an n-side electrode provided on the first semiconductor layer; a p-side electrode provided on the second semiconductor layer; and grooves that separate the n-side electrode and the p-side electrode from each other. The respective widths of the grooves in a direction in which the n-side electrode and the p-side electrode are spaced apart are set to be wider in the outer peripheral region than in the inner region.
Abstract translation: 太阳能电池包括:具有主面的基底; 设置在所述主表面上的第一区域中的第一半导体层; 设置在所述主表面上的第二区域中的第二半导体层; 设置在所述第一半导体层上的n侧电极; 设置在所述第二半导体层上的p侧电极; 以及将n侧电极和p侧电极分离的槽。 n侧电极和p侧电极间隔开的方向上的沟槽宽度相对于内侧区域的宽度设定得比外周区域宽。
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公开(公告)号:US20160260858A1
公开(公告)日:2016-09-08
申请号:US15059281
申请日:2016-03-02
Inventor: Akimichi MAEKAWA , Tasuku ISHIGURO , Hiroshi KANNO , Takahiro MISHIMA
IPC: H01L31/054 , H01L31/05
CPC classification number: H01L31/0547 , H01L27/14629 , H01L31/02327 , H01L31/0504 , H01L31/054 , H01L33/405 , H01L33/60 , H01L2224/0615 , Y02E10/52
Abstract: A solar cell module includes: first and second solar cell strings each including solar cells arranged in an arrangement direction and electrically connected to one another; and a light diffusion sheet disposed between the first and second solar cell strings. The first and second solar cell strings are disposed adjacent to each other and parallel to each other along the arrangement direction. The light diffusion sheet is disposed such that both side edge portions of the light diffusion sheet overlap light-receiving surface sides of side edge portions of the first and second solar cell strings.
Abstract translation: 太阳能电池模块包括:第一和第二太阳能电池串,每个太阳能电池串包括沿排列方向布置并彼此电连接的太阳能电池; 以及设置在第一和第二太阳能电池串之间的光漫射片。 第一和第二太阳能电池串彼此相邻设置并且沿着排列方向彼此平行。 光漫射片被布置成使得光扩散片的两个侧边缘部分与第一和第二太阳能电池串的侧边缘部分的光接收表面侧重叠。
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公开(公告)号:US20160268470A1
公开(公告)日:2016-09-15
申请号:US15164874
申请日:2016-05-26
Inventor: Naofumi HAYASHI , Mitsuaki MORIGAMI , Masato SHIGEMATSU , Takahiro MISHIMA
IPC: H01L31/20 , H01L31/0224
CPC classification number: H01L31/202 , H01L31/022441 , H01L31/022491 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.
Abstract translation: 太阳能电池制造方法包括:在半导体衬底的主表面上形成一种导电类型的第一非晶半导体层; 在所述第一非晶半导体层上形成绝缘层; 蚀刻以在预定的第一区域中去除绝缘层和第一非晶半导体层; 在蚀刻之后在绝缘层上形成另一种导电类型的第二非晶半导体层,另一种导电类型不同于一种导电类型; 以及蚀刻以在预定的第二区域去除所述第二非晶半导体层,其中在预定的第一区域中去除所述绝缘层和所述第一非晶半导体层的所述蚀刻包括:在所述预定的第一区域中的所述绝缘层上施加蚀刻浆料; 并使用蚀刻膏蚀刻以除去预定的第一区域中的绝缘层和第一非晶半导体层。
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公开(公告)号:US20160343889A1
公开(公告)日:2016-11-24
申请号:US15227968
申请日:2016-08-04
Inventor: Takahiro MISHIMA
IPC: H01L31/0224 , H01L31/0376 , H01L31/0352
Abstract: A solar cell is provided which includes: a photoelectric converter having a p-type surface on a major surface and an n-type surface on the major surface; a p-side electrode disposed on the p-type surface and formed from a plating film; an n-side electrode disposed on the n-type surface and formed from a plating film; a p-side seed layer disposed between the p-type surface and the p-side electrode; and an n-side seed layer disposed between the n-type surface and the n-side electrode, wherein a width W1 between the two closest points of the p-side electrode and the n-side electrode that are adjacent one another is greater than a width W2 between the two closest points of an end of the p-side seed layer and an end of the n-side seed layer that are adjacent one another.
Abstract translation: 提供一种太阳能电池,其包括:在主表面上具有p型表面的光电转换器和主表面上的n型表面; p型电极,设置在p型表面上并由镀膜形成; 设置在n型表面上并由镀膜形成的n侧电极; 设置在p型表面和p侧电极之间的p侧种子层; 以及设置在n型面和n侧电极之间的n侧种子层,其中,相邻的p侧电极和n侧电极的两个最近点之间的宽度W1大于 p侧种子层的端部的两个最近点与相邻的n侧种子层的端部之间的宽度W2。
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公开(公告)号:US20150340531A1
公开(公告)日:2015-11-26
申请号:US14718161
申请日:2015-05-21
Inventor: Naofumi HAYASHI , Takahiro MISHIMA , Keiichiro MASUKO
IPC: H01L31/075 , H01L31/18
Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.
Abstract translation: 提供一种太阳能电池,其包括具有第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层,以及半导体衬底的主表面上; 第一半导体层上的绝缘层; 绝缘层上的保护层; 以及具有第二导电类型的第二半导体层,并且在半导体衬底和保护层上。 凹陷区域位于绝缘层的横向侧,通过将绝缘层的侧表面从第一半导体层的侧表面和保护层的侧表面向内凹陷而形成的凹陷区域,以及第二半导体 层位于凹陷区域中的第一半导体层上方的凹陷区域中。
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