公开(公告)号：US20160268470A1

公开(公告)日：2016-09-15

申请号：US15164874

申请日：2016-05-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naofumi HAYASHI ,  Mitsuaki MORIGAMI ,  Masato SHIGEMATSU ,  Takahiro MISHIMA

IPC: H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/202 ,  H01L31/022441 ,  H01L31/022491 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.

Abstract translation: 太阳能电池制造方法包括：在半导体衬底的主表面上形成一种导电类型的第一非晶半导体层; 在所述第一非晶半导体层上形成绝缘层; 蚀刻以在预定的第一区域中去除绝缘层和第一非晶半导体层; 在蚀刻之后在绝缘层上形成另一种导电类型的第二非晶半导体层，另一种导电类型不同于一种导电类型; 以及蚀刻以在预定的第二区域去除所述第二非晶半导体层，其中在预定的第一区域中去除所述绝缘层和所述第一非晶半导体层的所述蚀刻包括：在所述预定的第一区域中的所述绝缘层上施加蚀刻浆料; 并使用蚀刻膏蚀刻以除去预定的第一区域中的绝缘层和第一非晶半导体层。