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公开(公告)号:US11626258B2
公开(公告)日:2023-04-11
申请号:US17483637
申请日:2021-09-23
Inventor: Taisuke Matsui , Ryosuke Kikuchi , Tomoyasu Yokoyama , Fumiyasu Oba , Yu Kumagai
Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.
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公开(公告)号:US11935971B2
公开(公告)日:2024-03-19
申请号:US17821818
申请日:2022-08-24
Inventor: Tomoyasu Yokoyama , Ryosuke Kikuchi , Yu Nishitani
IPC: H01L31/0224 , H01L31/0264
CPC classification number: H01L31/022425 , H01L31/0264
Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10−7 S/cm.
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公开(公告)号:US11417784B2
公开(公告)日:2022-08-16
申请号:US16223885
申请日:2018-12-18
Inventor: Koki Ueno , Ryosuke Kikuchi , Toru Nakamura , Takahiro Kurabuchi , Yasushi Kaneko , Kazuhito Hato , Fumiyasu Oba , Yu Kumagai
IPC: H01L31/032 , C25B1/04 , C01B21/06 , C25B1/55
Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
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公开(公告)号:US10411144B2
公开(公告)日:2019-09-10
申请号:US15979931
申请日:2018-05-15
Inventor: Hideaki Murase , Ryosuke Kikuchi
IPC: H01L31/00 , H01L31/0224 , C01B3/02 , H01L31/18 , H01L31/0216 , C01B3/04
Abstract: A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.
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公开(公告)号:US09926633B2
公开(公告)日:2018-03-27
申请号:US14676734
申请日:2015-04-01
Inventor: Ryosuke Kikuchi , Takaiki Nomura , Kazuhito Hato , Satoru Tamura , Takahiro Kurabuchi
CPC classification number: C25B1/04 , C01B3/042 , C25B1/003 , C25B11/04 , C25B11/0478 , H01G9/20 , Y02E60/364 , Y02E60/368 , Y02P20/135
Abstract: The present invention provides a method for generating hydrogen by water splitting at a higher hydrogen generation efficiency. In the present method, used is a photoelectrochemical cell comprising a container, a liquid stored in the container, a semiconductor electrode contained in the container, and a counter electrode contained in the container. The semiconductor electrode comprises a first semiconductor layer, a light-transmissive conductor layer; and a second semiconductor layer.
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公开(公告)号:US09644276B2
公开(公告)日:2017-05-09
申请号:US14509361
申请日:2014-10-08
Inventor: Satoru Tamura , Kazuhito Hato , Takaiki Nomura , Takahiro Suzuki , Yoshihiro Kozawa , Ryosuke Kikuchi
IPC: C25B1/04 , C25B9/00 , C25B11/04 , H01L31/0687 , C25B1/00 , H01M8/0656 , H01M8/04082
CPC classification number: C25B1/003 , C25B1/04 , C25B11/0452 , C25B11/0478 , H01M8/04201 , H01M8/0656 , Y02E60/368 , Y02P20/135
Abstract: Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.
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