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公开(公告)号:US12063799B2
公开(公告)日:2024-08-13
申请号:US17525856
申请日:2021-11-12
Inventor: Maki Hiraoka , Toru Nakamura , Ryuusuke Uchida , Akio Matsushita
CPC classification number: H10K30/80 , H01G9/2059 , H10K85/30 , H10K71/15 , H10K71/40
Abstract: The present disclosure provides a photoelectric conversion film having a high light absorption ability and a long carrier life. A photoelectric conversion film of the present disclosure includes a perovskite compound including a monovalent formamidinium cation, a Pb cation and an iodide ion. The film thickness of the photoelectric conversion film is greater than or equal to 1 μm. In the photoelectric conversion film, the ratio of root mean square roughness Rq to the film thickness is less than or equal to 0.13.
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公开(公告)号:US11417784B2
公开(公告)日:2022-08-16
申请号:US16223885
申请日:2018-12-18
Inventor: Koki Ueno , Ryosuke Kikuchi , Toru Nakamura , Takahiro Kurabuchi , Yasushi Kaneko , Kazuhito Hato , Fumiyasu Oba , Yu Kumagai
IPC: H01L31/032 , C25B1/04 , C01B21/06 , C25B1/55
Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
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