公开(公告)号：US10411144B2

公开(公告)日：2019-09-10

申请号：US15979931

申请日：2018-05-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideaki Murase ,  Ryosuke Kikuchi

IPC: H01L31/00 ,  H01L31/0224 ,  C01B3/02 ,  H01L31/18 ,  H01L31/0216 ,  C01B3/04

Abstract: A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.

公开(公告)号：US09082974B2

公开(公告)日：2015-07-14

申请号：US13983071

申请日：2012-09-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takumi Mikawa ,  Hideaki Murase

IPC: H01L21/20 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/16 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

Abstract: A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend (or stepped portion) covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer.

Abstract translation: 非易失性存储元件包括：形成在衬底上的下电极; 第一可变电阻层，形成在所述下电极上并包括第一金属氧化物; 第二可变电阻层，其形成在所述第一可变电阻层上方，并且包含氧缺乏程度低于所述第一金属氧化物的缺氧程度的第二金属氧化物; 以及形成在第二可变电阻层上方的上电极。 在第一可变电阻层和第二可变电阻层之间的界面中形成单个步骤。 形成第二可变电阻层以覆盖该台阶，并且在该台阶之上具有覆盖台阶的弯曲部（或阶梯部）。 从上方看到的弯曲部在第二可变电阻层的表面中仅具有一个角部。