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公开(公告)号：US20240164214A1
公开(公告)日：2024-05-16
申请号：US18420437
申请日：2024-01-23
Inventor： Masaki FUJIKANE , Naoki TAMBO , Kunihiko NAKAMURA , Kouhei TAKAHASHI , Yasuyuki NAITO
IPC: H10N10/857 , H10N10/17 , H10N10/85
CPC classification number: H10N10/857 , H10N10/17 , H10N10/85
Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.
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Patent Agency Ranking
公开(公告)号：US20240011840A1
公开(公告)日：2024-01-11
申请号：US18471081
申请日：2023-09-20
Inventor： Kosei OHURA , Naoki TAMBO , Kouhei TAKAHASHI , Masaki FUJIKANE , Hiroyuki TANAKA
IPC: G01J5/10
CPC classification number: G01J5/10
Abstract: A multilayer body of the present disclosure includes a phononic crystal layer and a metal layer. The phononic crystal layer has a plurality of recesses. The metal layer is disposed on or above the phononic crystal layer. Metal atoms of a kind identical to that of metal atoms contained in the metal layer are present inside the recesses.
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3.发明申请公开(公告)号：US20190284719A1
公开(公告)日：2019-09-19
申请号：US16433505
申请日：2019-06-06
Inventor： Masaki FUJIKANE
Abstract: A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
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4.发明申请公开(公告)号：US20170152164A1
公开(公告)日：2017-06-01
申请号：US15428481
申请日：2017-02-09
Inventor： Mari ONODERA , Masaki FUJIKANE , Shin-ichi IMAI
CPC classification number: C02F1/4608 , A47K13/302 , C02F2303/04 , C02F2305/023 , C02F2307/12
Abstract: A liquid treatment unit includes: a treatment tank provided with an inlet and an outlet, the treatment tank having a shape that allows a portion of liquid to be retained; a controller that controls supply of liquid into the treatment tank and ejection of liquid from the treatment tank; and a plasma generator generates plasma in the liquid inside the treatment tank. The plasma generator generates plasma while the controller stops supply of liquid and ejection of liquid. After the liquid has been treated, the controller resumes the supply of liquid, and causes the liquid to be ejected from the treatment tank while allowing a portion of the treated liquid to be retained inside the treatment tank.
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5.发明申请LIQUID TREATMENT DEVICE, LIQUID TREATMENT METHOD, AND PLASMA TREATMENT LIQUID 有权液体处理装置，液体处理方法和等离子体处理液公开(公告)号：US20150191371A1
公开(公告)日：2015-07-09
申请号：US14662182
申请日：2015-03-18
Inventor： Masaki FUJIKANE , Mari ONODERA , Hironori KUMAGAI , Shin-ichi IMAI
CPC classification number: C02F1/4608 , B01J19/088 , B01J2219/0809 , B01J2219/0815 , B01J2219/0894 , C02F2201/46 , C02F2201/46175 , C02F2303/04 , H05H1/2406 , H05H2001/2418
Abstract: The present disclosure provides a liquid treatment device, a liquid treatment method, and a plasma treatment liquid each capable of efficiently generating plasma and treating a liquid in a short time period. A liquid treatment device according to the present disclosure includes a first electrode, a second electrode disposed in a liquid to be treated, an insulator disposed around the first electrode with a space between the first electrode and the insulator, the insulator has an opening portion in a position in contact with the liquid to be treated, a power supply that applies voltage between the first electrode and the second electrode, and a supply device supplying a liquid to the space before the power source applies the voltage.
Abstract translation: 本公开内容提供了能够在短时间内有效地产生等离子体和处理液体的液体处理装置，液体处理方法和等离子体处理液。 根据本公开的液体处理装置包括第一电极，设置在待处理液体中的第二电极，在第一电极周围设置有在第一电极和绝缘体之间具有空间的绝缘体，绝缘体具有开口部分 与待处理的液体接触的位置，在第一电极和第二电极之间施加电压的电源以及在电源施加电压之前向空间供应液体的供应装置。
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公开(公告)号：US20150162495A1
公开(公告)日：2015-06-11
申请号：US14565572
申请日：2014-12-10
Inventor： Akira INOUE , Toshiya YOKOGAWA , Atsushi YAMADA , Masaki FUJIKANE
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/54 , H01L2224/14 , H01L2224/16225
Abstract: A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.
Abstract translation: 氮化物半导体发光元件300是具有多层结构310的氮化物半导体发光元件，多层结构310包括由m面氮化物半导体构成的有源层。 多层结构310具有平行于氮化物半导体活性层306中的m面的光提取面311a和与氮化物半导体活性层306中的c面平行的光提取面311b。 光提取面311b的面积与光提取面311a的面积不大于46％。
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