公开(公告)号：US20150318445A1

公开(公告)日：2015-11-05

申请号：US14800852

申请日：2015-07-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Songbaek CHOE ,  Naomi ANZUE ,  Ryou KATO ,  Toshiya YOKOGAWA

IPC: H01L33/40 ,  H01L33/50 ,  H01L33/32 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01L33/502 ,  H01L2224/16225

Abstract: A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%.

Abstract translation: 氮化物系半导体发光元件包括：氮化物系半导体多层结构，其包含具有m面作为生长面的p型半导体区域; 以及设置成与p型半导体区域的生长平面接触的Ag电极，其中Ag电极的厚度在不小于200nm且不大于1000nm的范围内; Ag电极的生长面上的（111）面的X射线强度与（200）面的X射线强度的积分强度比在20以上且100以下的范围内， 并且Ag电极具有不小于70％的反射率。

公开(公告)号：US20150162495A1

公开(公告)日：2015-06-11

申请号：US14565572

申请日：2014-12-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akira INOUE ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Masaki FUJIKANE

IPC: H01L33/20 ,  H01L33/18 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L2224/14 ,  H01L2224/16225

Abstract: A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

Abstract translation: 氮化物半导体发光元件300是具有多层结构310的氮化物半导体发光元件，多层结构310包括由m面氮化物半导体构成的有源层。 多层结构310具有平行于氮化物半导体活性层306中的m面的光提取面311a和与氮化物半导体活性层306中的c面平行的光提取面311b。 光提取面311b的面积与光提取面311a的面积不大于46％。