公开(公告)号：US20150357522A1

公开(公告)日：2015-12-10

申请号：US14830713

申请日：2015-08-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Atsushi YAMADA ,  Akira INOUE

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/38 ,  H01L33/24 ,  H01L33/20

CPC classification number: H01L33/24 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38

Abstract: In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: 20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa)  Group Aa: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb).  Group Ab:

Abstract translation: 在顶视图中具有等腰三角形状的氮化物半导体发光二极管中，由以下两个数学式（Ia）和（IIa）组成的组Aa或由以下两个数学式（Ib）组成的组A a， 并且（IIb）满足：20度＆lt; nlE;角度α＆nlE; 40度（Ia）和0度＆amp; nlE;角度和角度;＆nlE; 40度（IIa）组Aa：90度和nlE;角度α＆ 50度＆nlE;角度和角度;＆nlE; 90度（IIb）。 组Ab：

公开(公告)号：US20150162495A1

公开(公告)日：2015-06-11

申请号：US14565572

申请日：2014-12-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akira INOUE ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Masaki FUJIKANE

IPC: H01L33/20 ,  H01L33/18 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L2224/14 ,  H01L2224/16225

Abstract: A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

Abstract translation: 氮化物半导体发光元件300是具有多层结构310的氮化物半导体发光元件，多层结构310包括由m面氮化物半导体构成的有源层。 多层结构310具有平行于氮化物半导体活性层306中的m面的光提取面311a和与氮化物半导体活性层306中的c面平行的光提取面311b。 光提取面311b的面积与光提取面311a的面积不大于46％。