公开(公告)号：US09842645B2

公开(公告)日：2017-12-12

申请号：US15450648

申请日：2017-03-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroyuki Tezuka ,  Yoshikazu Katoh

IPC: G11C11/00 ,  G11C13/00 ,  G06F3/06

CPC classification number: G11C13/004 ,  G06F3/061 ,  G06F3/0625 ,  G06F3/0653 ,  G06F3/0679 ,  G11C13/0026 ,  G11C13/0061 ,  G11C13/0097 ,  G11C2213/79

Abstract: A nonvolatile memory device comprises: a nonvolatile memory; a resistance-time converter that outputs an end signal at timing according to a resistance value of the nonvolatile memory; and a time-digital converter that measures the time from input of a start signal to input of the end signal and converts the measured time into a digital value. The time-digital converter includes: a ring delay circuit that includes delay elements connected in a ring configuration; a counter circuit that counts the number of times of a rising edge or a falling edge in output of one of the delay elements; a first memory circuit that stores, based on the end signal, outputs of the delay elements as first data; and a second memory circuit that stores, based on the end signal, a count value of the counter circuit as second data.