公开(公告)号：US20150303292A1

公开(公告)日：2015-10-22

申请号：US14788791

申请日：2015-07-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SHIBATA ,  NOBORU NEGORO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/205 ,  H01L29/10 ,  H01L29/872

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/872

Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.

Abstract translation: 氮化物半导体器件包括：衬底; 形成在所述基板上的缓冲层; 通过两个或更多个半导体层的循环形成的层叠体，每个半导体层包括第一氮化物半导体层和具有比第一氮化物半导体层的带隙大的带隙的第二氮化物半导体层，第一和第二氮化物半导体层为 按顺序层叠在缓冲层上; 第一电极; 和第二电极。 在第一氮化物半导体层和第二氮化物半导体层之间的界面处，在每个半导体层中形成沟道层。 最上层半导体层中的沟道层的载流子浓度低于其它半导体层的沟道层的载流子浓度。

公开(公告)号：US20170098703A1

公开(公告)日：2017-04-06

申请号：US15381120

申请日：2016-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAHIRO OGAWA ,  MASAHIRO ISHIDA ,  DAISUKE SHIBATA ,  RYO KAJITANI

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7847

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).

公开(公告)号：US20160329421A1

公开(公告)日：2016-11-10

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SHIBATA ,  KENICHIRO TANAKA ,  MASAHIRO ISHIDA ,  SHINICHI KOHDA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/861 ,  H01L29/417 ,  H01L29/872 ,  H01L29/04 ,  H01L29/205

CPC classification number: H01L29/7788 ,  H01L29/045 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/7789 ,  H01L29/861 ,  H01L29/872

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

Abstract translation: 根据本公开的氮化物半导体器件包括：衬底; 第一氮化物半导体层，其形成在所述基板上，并且具有C面作为主表面; 形成在第一氮化物半导体层上并具有p型导电性的第二氮化物半导体层; 以及形成在第二氮化物半导体层中并到达第一氮化物半导体层的第一开口。 氮化物半导体器件还包括形成为覆盖第二氮化物半导体层中的第一开口的第三氮化物半导体层; 第一电极，其形成在所述第三氮化物半导体层上以包括所述第一开口的区域; 以及形成在基板的后表面上的第二电极。

公开(公告)号：US20160049347A1

公开(公告)日：2016-02-18

申请号：US14925608

申请日：2015-10-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NOBORU NEGORO ,  NAOHIRO TSURUMI ,  DAISUKE SHIBATA

IPC: H01L23/31 ,  H01L29/872 ,  H01L29/47 ,  H01L23/29 ,  H01L29/51 ,  H01L21/02 ,  H01L29/205 ,  H01L21/283 ,  H01L21/56 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L23/3171 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/283 ,  H01L21/563 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L29/0638 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor layer made of nitride semiconductor, an ohmic electrode and a schottky electrode both formed on the semiconductor layer, a first insulating film containing a small amount of hydrogen per unit volume for covering the semiconductor device on a top face defined between the ohmic electrode and the schottky electrode and also covering the schottky electrode, and a second insulating film formed on the first insulating film and containing a greater amount of hydrogen per unit volume than the first insulating film.

Abstract translation: 半导体器件包括由氮化物半导体制成的半导体层，均匀地形成在半导体层上的欧姆电极和肖特基电极，每单位体积含有少量氢的第一绝缘膜，用于在半导体器件的顶面上覆盖半导体器件， 欧姆电极和肖特基电极，并且还覆盖肖特基电极，以及形成在第一绝缘膜上并且每单位体积含有比第一绝缘膜更大量的氢的第二绝缘膜。