公开(公告)号：US20160035853A1

公开(公告)日：2016-02-04

申请号：US14884815

申请日：2015-10-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SAICHIROU KANEKO ,  HIROTO YAMAGIWA ,  AYANORI IKOSHI ,  MASAYUKI KURODA ,  MANABU YANAGIHARA ,  KENICHIRO TANAKA ,  TETSUYUKI FUKUSHIMA

IPC: H01L29/47 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/872

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract translation: 在本公开的半导体器件中，第一氮化物半导体层在与第二氮化物半导体层的界面附近具有二维电子气体通道。 在平面图中，电极部分设置在第一电极和第二电极之间，第一电极和第二电极之间具有空间，并且第二电极和电极部分之间的空间小于第一电极和第二电极之间的空间， 电极部分。 能量势垒设置在电极部分和第二氮化物半导体层之间的接合面中，能量势垒指示从电极部分到第二氮化物半导体层的向前方向的整流作用，以及第二氮化物半导体的带隙 层比第一氮化物半导体层的带隙宽。

公开(公告)号：US20150303293A1

公开(公告)日：2015-10-22

申请号：US14790064

申请日：2015-07-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENICHIRO TANAKA ,  SHINICHI KOHDA ,  MASAHIRO ISHIDA ,  TETSUZO UEDA

IPC: H01L29/778 ,  H01L29/207 ,  H01L29/06 ,  H01L29/36 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7786

Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 μm.

Abstract translation: 场效应晶体管包括由Al x Ga 1-x N（0＆nlE; x＆nlE; 1）构成并且形成在p型Si衬底上的共掺层，在共掺层上形成的GaN层和形成在GaN层上的AlGaN层。 共掺层含有C和Si作为杂质元素。 共掺层中的C的杂质浓度等于或高于5×1017 / cm3。 共掺层中Si的杂质浓度低于C的杂质浓度.Ca层中的C的杂质浓度等于或低于1×1017 / cm3。 GaN层的厚度等于或大于0.75μm。

公开(公告)号：US20160329421A1

公开(公告)日：2016-11-10

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SHIBATA ,  KENICHIRO TANAKA ,  MASAHIRO ISHIDA ,  SHINICHI KOHDA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/861 ,  H01L29/417 ,  H01L29/872 ,  H01L29/04 ,  H01L29/205

CPC classification number: H01L29/7788 ,  H01L29/045 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/7789 ,  H01L29/861 ,  H01L29/872

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

Abstract translation: 根据本公开的氮化物半导体器件包括：衬底; 第一氮化物半导体层，其形成在所述基板上，并且具有C面作为主表面; 形成在第一氮化物半导体层上并具有p型导电性的第二氮化物半导体层; 以及形成在第二氮化物半导体层中并到达第一氮化物半导体层的第一开口。 氮化物半导体器件还包括形成为覆盖第二氮化物半导体层中的第一开口的第三氮化物半导体层; 第一电极，其形成在所述第三氮化物半导体层上以包括所述第一开口的区域; 以及形成在基板的后表面上的第二电极。