公开(公告)号：US20160064600A1

公开(公告)日：2016-03-03

申请号：US14934244

申请日：2015-11-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAYUKI KURODA ,  MANABU YANAGIHARA ,  SHINICHI OKI

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/18 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L25/167 ,  H01L27/15 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/0033 ,  H01L33/0041 ,  H01L33/18 ,  H01L33/32 ,  H01L33/36 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.

Abstract translation: 氮化物半导体器件包括形成在衬底上的半导体层叠体的晶体管和形成在半导体层叠体上的pn发光体。 半导体层叠体包括第一氮化物半导体层和形成在第一氮化物半导体层上并具有比第一氮化物半导体层宽的带隙的第二氮化物半导体层。 晶体管包括：半导体层叠体; 在半导体层叠体上彼此远离形成的源电极和漏电极; 以及设置在源电极和漏电极之间并且远离源电极和漏电极形成的栅电极。 pn发光体包括p型氮化物半导体层和n型氮化物半导体层，以发射具有高于存在于半导体层叠体中的电子俘获电平的能量值的光束，其中p型 pn发光体的氮化物半导体层与栅电极电连接，作为晶体管的栅极。

公开(公告)号：US20160035853A1

公开(公告)日：2016-02-04

申请号：US14884815

申请日：2015-10-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SAICHIROU KANEKO ,  HIROTO YAMAGIWA ,  AYANORI IKOSHI ,  MASAYUKI KURODA ,  MANABU YANAGIHARA ,  KENICHIRO TANAKA ,  TETSUYUKI FUKUSHIMA

IPC: H01L29/47 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/872

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract translation: 在本公开的半导体器件中，第一氮化物半导体层在与第二氮化物半导体层的界面附近具有二维电子气体通道。 在平面图中，电极部分设置在第一电极和第二电极之间，第一电极和第二电极之间具有空间，并且第二电极和电极部分之间的空间小于第一电极和第二电极之间的空间， 电极部分。 能量势垒设置在电极部分和第二氮化物半导体层之间的接合面中，能量势垒指示从电极部分到第二氮化物半导体层的向前方向的整流作用，以及第二氮化物半导体的带隙 层比第一氮化物半导体层的带隙宽。