ALIGNING MEMORY ACCESS OPERATIONS TO A GEOMETRY OF A STORAGE DEVICE
    1.
    发明申请
    ALIGNING MEMORY ACCESS OPERATIONS TO A GEOMETRY OF A STORAGE DEVICE 审中-公开
    对存储设备的几何进行记忆存取操作

    公开(公告)号:US20160378356A1

    公开(公告)日:2016-12-29

    申请号:US14748194

    申请日:2015-06-23

    Abstract: Aligning memory access operations to a geometry of a storage device, including: receiving, by a storage array controller, information describing the layout of memory in the storage device; determining, by the storage array controller, a write size in dependence upon the layout of memory in the storage device; and sending, by the storage array controller, a write request addressed to a location within the memory unit in dependence upon the layout of memory in the storage device.

    Abstract translation: 将存储器访问操作与存储设备的几何对齐,包括:由存储阵列控制器接收描述存储设备中存储器布局的信息; 由存储阵列控制器根据存储设备中存储器的布局确定写入大小; 以及存储阵列控制器,根据所述存储设备中的存储器的布局,发送寻址到所述存储器单元内的位置的写入请求。

    EXPOSING A GEOMETRY OF A STORAGE DEVICE
    2.
    发明申请
    EXPOSING A GEOMETRY OF A STORAGE DEVICE 有权
    展示存储设备的几何

    公开(公告)号:US20160378351A1

    公开(公告)日:2016-12-29

    申请号:US14747842

    申请日:2015-06-23

    Abstract: Exposing a geometry of a storage device, including: sending, by the storage device, information describing the layout of memory in the storage device; receiving, by the storage device, a write request, the write request associated with an amount of data sized in dependence upon the layout of memory in the storage device; and writing, by the storage device, the data to a memory unit, the data written to a location within the memory unit in dependence upon the layout of memory in the storage device.

    Abstract translation: 公开存储设备的几何形状,包括:由存储设备发送描述存储设备中存储器布局的信息; 由所述存储装置接收写入请求,所述写请求与根据所述存储装置中的存储器布局尺寸大小的数据量相关联; 以及由所述存储装置将所述数据写入存储器单元,所述数据根据所述存储装置中的存储器的布局写入所述存储器单元内的位置。

    PAGE WRITE REQUIREMENTS FOR A DISTRIBUTED STORAGE SYSTEM

    公开(公告)号:US20240170058A1

    公开(公告)日:2024-05-23

    申请号:US18522111

    申请日:2023-11-28

    Abstract: A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.

    BUFFERING DATA TO BE WRITTEN TO AN ARRAY OF NON-VOLATILE STORAGE DEVICES
    9.
    发明申请
    BUFFERING DATA TO BE WRITTEN TO AN ARRAY OF NON-VOLATILE STORAGE DEVICES 审中-公开
    缓冲数据可以写入非易失性存储设备的阵列

    公开(公告)号:US20160350009A1

    公开(公告)日:2016-12-01

    申请号:US14725278

    申请日:2015-05-29

    Abstract: Buffering data to be written to an array of non-volatile storage devices, including: receiving a request to write data to the array of non-volatile storage devices; sending, to a non-volatile random access memory (‘NVRAM’) device, an instruction to write the data to dynamic random access memory (‘DRAM’) in the NVRAM device, the DRAM configured to receive power from a primary power source, the DRAM further configured to receive power from a backup power source in response to the primary power source failing; and writing the data to the DRAM in the NVRAM device.

    Abstract translation: 缓冲要写入非易失性存储设备阵列的数据,包括:接收向非易失性存储设备阵列写入数据的请求; 向非易失性随机存取存储器(“NVRAM”)设备发送将数据写入NVRAM器件中的动态随机存取存储器(“DRAM”)的指令,该DRAM被配置为从主电源接收电力, DRAM还被配置为响应于主电源故障从备用电源接收电力; 并将数据写入NVRAM器件中的DRAM。

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