INDUCTANCE STRUCTURE
    3.
    发明申请

    公开(公告)号:US20220328613A1

    公开(公告)日:2022-10-13

    申请号:US17686744

    申请日:2022-03-04

    摘要: An inductance structure is provided and includes a plurality of inductance traces embedded in an insulating body and at least one shielding layer that is embedded in the insulating body and free from being electrically connected to the inductance traces. The shielding layer has a plurality of line segments that are free from being connected to one another. The shielding layer shields the inductance traces to improve the inductance value and quality factor.

    SEMICONDUCTOR PACKAGE SUBSTRATE, ELECTRONIC PACKAGE AND METHODS FOR FABRICATING THE SAME

    公开(公告)号:US20200312756A1

    公开(公告)日:2020-10-01

    申请号:US16832084

    申请日:2020-03-27

    IPC分类号: H01L23/498 H01L21/48

    摘要: A semiconductor packaging substrate and a method for fabricating the same are provided. The method includes forming a solder resist structure having a hole on a circuit structure, with a portion of the circuit structure exposed from the hole, and forming a cup-shaped solder stand on the exposed circuit layer and a hole wall of the hole. During a packaging process, the design of the solder stand increases a contact area of a solder tin ball with a metal material. Therefore, a bonding force between the solder tin ball and the solder stand is increased, and the solder tin ball can be protected from being broken or fell off. An electronic package having the semiconductor packaging substrate and a method for fabricating the electronic package are also provided.

    Package substrate, package structure including the same, and their fabrication methods

    公开(公告)号:US09711445B2

    公开(公告)日:2017-07-18

    申请号:US15054861

    申请日:2016-02-26

    IPC分类号: H01L23/02 H01L23/498

    摘要: This disclosure provides a package substrate, a package structure including the same and their fabrication methods. The package substrate comprises: a first wiring layer having a first metal wire and a first dielectric material layer surrounding the first metal wire; a conductive pillar layer formed on the first wiring layer and including a first metal pillar connected to the first metal wire and a molding compound layer surrounding the first metal pillar; a flexible material layer formed on the conductive pillar layer and including a first opening formed on the first metal pillar and exposing the first metal pillar; and a second wiring layer formed on the conductive pillar layer and including a second metal wire connected to the first metal pillar through the first opening, a second metal pillar formed on the second metal wire, and a protective layer surrounding the second metal wire and the second metal pillar.

    FLIP-CHIP PACKAGE SUBSTRATE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20210098351A1

    公开(公告)日:2021-04-01

    申请号:US17020984

    申请日:2020-09-15

    摘要: A flip-chip package substrate and a method for fabricating the same are provided. An insulation layer is formed on two opposing sides of a middle layer to form a composite core structure and increase the rigidity of the flip-chip package substrate. Therefore, the core structure can be made thinner. The conductive structures can also have a smaller end size, and more conductive points can be disposed within a unit area. Therefore, a circuit structure can be produced that have a fine line pitch and a high wiring density, satisfy the packaging demands of highly integrated circuit/large size substrate, and avoid an electronic package from being warpage.