公开(公告)号：US10903359B2

公开(公告)日：2021-01-26

申请号：US16488199

申请日：2019-01-17

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Chie Fujioka ,  Hiroshi Yoshida ,  Yoshihiro Matsushima ,  Hideki Mizuhara ,  Masao Hamasaki ,  Mitsuaki Sakamoto

IPC: H01L29/78 ,  H01L23/538 ,  H01L27/088

Abstract: A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.