Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16488199Application Date: 2019-01-17
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Publication No.: US10903359B2Publication Date: 2021-01-26
- Inventor: Chie Fujioka , Hiroshi Yoshida , Yoshihiro Matsushima , Hideki Mizuhara , Masao Hamasaki , Mitsuaki Sakamoto
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will and Emery LLP
- International Application: PCT/JP2019/001315 WO 20190117
- International Announcement: WO2019/244383 WO 20191226
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/538 ; H01L27/088
Abstract:
A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.
Information query
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