-
公开(公告)号：US07723704B2
公开(公告)日：2010-05-25
申请号：US11595085
申请日：2006-11-10
IPC分类号： G03F1/00
摘要： According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.
摘要翻译： 根据一个示例性实施例，用于保护光刻掩模的极紫外（EUV）防护薄膜组件包括气凝胶膜。 防护薄膜还包括用于将气凝胶膜安装在平版印刷掩模上的框架。 气凝胶膜使防护薄膜具有增加的EUV透光率。
-
2.发明申请EUV debris mitigation filter and method for fabricating semiconductor dies using same 有权EUV碎片缓解滤波器和使用其制造半导体管芯的方法公开(公告)号：US20080225245A1
公开(公告)日：2008-09-18
申请号：US11717518
申请日：2007-03-13
申请人： Obert Reeves Wood , Thomas Wallow , Ryoung-Han Kim
发明人： Obert Reeves Wood , Thomas Wallow , Ryoung-Han Kim
CPC分类号： G03F7/70916
摘要： According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.
摘要翻译： 根据一个示例性实施例，用于光刻工具的极紫外（EUV）源收集器模块包括EUV碎片缓解滤波器。 EUV碎片缓解过滤器可以是气凝胶膜的形式，并且可以与包括常规碎屑减缓技术的组合的EUV碎片缓解模块组合使用。 EUV碎片缓解过滤器保护收集器光学元件免受EUV发光期间产生的不良碎屑的污染，同时有利地提供高水平的EUV透光率。 一个公开的实施例包括利用放电产生的等离子体（DPP）光源在EUV源极收集器模块中实现EUV碎片缓解滤波器。 一个公开的实施例包括利用激光产生的等离子体（LPP）光源在EUV源极收集器模块中实现EUV碎片缓解滤波器。
-
3.发明授权EUV debris mitigation filter and method for fabricating semiconductor dies using same 有权EUV碎片缓解滤波器和使用其制造半导体管芯的方法公开(公告)号：US07663127B2
公开(公告)日：2010-02-16
申请号：US11717518
申请日：2007-03-13
IPC分类号： G03B27/42
CPC分类号： G03F7/70916
摘要： According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.
摘要翻译： 根据一个示例性实施例，用于光刻工具的极紫外（EUV）源收集器模块包括EUV碎片缓解滤波器。 EUV碎片缓解过滤器可以是气凝胶膜的形式，并且可以与包括常规碎屑减缓技术的组合的EUV碎片缓解模块组合使用。 EUV碎片缓解过滤器保护收集器光学元件免受EUV发光期间产生的不良碎屑的污染，同时有利地提供高水平的EUV透光率。 一个公开的实施例包括利用放电产生的等离子体（DPP）光源在EUV源极收集器模块中实现EUV碎片缓解滤波器。 一个公开的实施例包括利用激光产生的等离子体（LPP）光源在EUV源极收集器模块中实现EUV碎片缓解滤波器。
-
公开(公告)号：US20080113491A1
公开(公告)日：2008-05-15
申请号：US11595085
申请日：2006-11-10
申请人： Obert Reeves Wood , Ryoung-Han Kim , Thomas Wallow
发明人： Obert Reeves Wood , Ryoung-Han Kim , Thomas Wallow
IPC分类号： H01L21/304 , G03F1/00
摘要： According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.
摘要翻译： 根据一个示例性实施例，用于保护光刻掩模的极紫外（EUV）防护薄膜组件包括气凝胶膜。 防护薄膜还包括用于将气凝胶膜安装在平版印刷掩模上的框架。 气凝胶膜使防护薄膜具有增加的EUV透光率。
-
5.发明申请Method for forming a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上形成高分辨率抗蚀剂图案的方法公开(公告)号：US20080233494A1
公开(公告)日：2008-09-25
申请号：US11726433
申请日：2007-03-22
IPC分类号： G03C11/00
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译： 在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，图案化辐射源可以是例如电子束或离子束。 在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。 在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。
-
6.发明授权Method for forming a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上形成高分辨率抗蚀剂图案的方法公开(公告)号：US08586269B2
公开(公告)日：2013-11-19
申请号：US11726433
申请日：2007-03-22
IPC分类号： G11B11/105
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译： 在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，图案化辐射源可以是例如电子束或离子束。 在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。 在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。
-
7.发明授权Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis 有权使用氧化型催化在半导体晶片上形成光致抗蚀剂图案的方法公开(公告)号：US08852854B2
公开(公告)日：2014-10-07
申请号：US11709721
申请日：2007-02-21
CPC分类号： G03F7/32
摘要： According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.
摘要翻译： 根据一个示例性实施例，在半导体晶片上形成光致抗蚀剂图案的方法包括在半导体晶片上形成包含有机聚合物基质的光致抗蚀剂。 该方法还包括将光致抗蚀剂暴露于图案化的辐射。 该方法还包括在将光致抗蚀剂暴露于图案辐射之后烘烤光致抗蚀剂。 该方法还包括将氧化剂施加到光致抗蚀剂以产生对应于图案化辐射的光致抗蚀剂图案。
-
公开(公告)号：US06451499B1
公开(公告)日：2002-09-17
申请号：US09604749
申请日：2000-06-27
申请人： Saikumar Jayaraman , Brian Leslie Goodall , Larry Funderburk Rhodes , Robert Adam Shick , Richard Vicari , Robert David Allen , Juliann Opitz , Ratnam Sooriyakumaran , Thomas Wallow
发明人： Saikumar Jayaraman , Brian Leslie Goodall , Larry Funderburk Rhodes , Robert Adam Shick , Richard Vicari , Robert David Allen , Juliann Opitz , Ratnam Sooriyakumaran , Thomas Wallow
IPC分类号： G03F7004
CPC分类号： C08F232/08 , C08G61/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , Y10S430/115
摘要： Polycyclic polymers containing pendant aromatic moieties are disclosed. The polymers exhibit light transparency properties to deep UV wave lengths making them useful for high resolution photolithographic applications. These polymers are particularly useful in chemically amplified positive and negative tone resists.
摘要翻译： 公开了含有侧芳基部分的多环聚合物。 聚合物对深UV波长显示出透光性，使其可用于高分辨率光刻应用。 这些聚合物特别适用于化学放大的正和负色调抗蚀剂。
-
9.发明申请Method for determining suitability of a resist in semiconductor wafer fabrication 有权确定半导体晶片制造中抗蚀剂适用性的方法公开(公告)号：US20090011524A1
公开(公告)日：2009-01-08
申请号：US11825448
申请日：2007-07-06
申请人： Thomas Wallow , Bruno M. LaFontaine
发明人： Thomas Wallow , Bruno M. LaFontaine
CPC分类号： G01N21/4788 , H01L22/12 , H01L2924/0002 , Y10S430/143 , H01L2924/00
摘要： In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.
摘要翻译： 在一个公开的实施例中，本发明确定用于半导体晶片制造的抗蚀剂适用性的方法包括在半导体晶片上形成抗蚀剂层，将抗蚀剂层暴露于图案化辐射，以及通过在显影光刻之前使用散射测定法确定抗蚀剂适应性 图案上的抗蚀剂层。 在一个实施例中，在执行散射测量之后，在后曝光烘烤处理中加热半导体晶片。 在一个实施例中，图案化的辐射由光刻工艺中的极紫外（EUV）光源提供。 在其他实施例中，例如通过电子束或离子束提供图案化辐射。 在一个实施例中，本方法确定在曝光于图案化辐射期间抗蚀剂层的排气。
-
10.发明申请Method for producing a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上制造高分辨率抗蚀剂图案的方法公开(公告)号：US20080292996A1
公开(公告)日：2008-11-27
申请号：US11805139
申请日：2007-05-21
IPC分类号： G03C5/00
摘要： In one disclosed embodiment, a method for producing a high resolution resist pattern on a semiconductor wafer comprises depositing a blanket layer of material on a semiconductor wafer, forming a resist interaction substrate on the blanket layer of material, forming a resist layer of a pre-determined thickness on the resist interaction substrate, exposing the resist layer to a patterned radiation, and developing the resulting high resolution resist pattern. In one embodiment, patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, patterned radiation may be provided by an electron beam, or ion beam, for example. In one embodiment, the resist layer comprises a chemically amplified resist utilizing a photogenerated acid (PGA), and having a sublayer. In other embodiments, the resist layer includes an additive, for example, fullerite. One disclosed embodiment involves use of an ultra-thin resist layer in combination with a gold resist interaction substrate.
摘要翻译： 在一个公开的实施例中，在半导体晶片上制造高分辨率抗蚀剂图案的方法包括在半导体晶片上沉积材料的覆盖层，在材料的覆盖层上形成抗蚀剂相互作用衬底， 在抗蚀剂相互作用衬底上确定厚度，将抗蚀剂层暴露于图案化辐射，以及显影所得到的高分辨率抗蚀剂图案。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，例如可以通过电子束或离子束来提供图案化辐射。 在一个实施方案中，抗蚀剂层包含利用光生酸（PGA）并具有亚层的化学放大抗蚀剂。 在其它实施方案中，抗蚀剂层包括添加剂，例如，高纯度的。 一个公开的实施例涉及使用与金抗蚀剂相互作用衬底组合的超薄抗蚀剂层。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.022 秒)
