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1.发明授权公开(公告)号：US10971653B2
公开(公告)日：2021-04-06
申请号：US16348662
申请日：2017-11-22
发明人： Alexander Tonkikh , Peter Stauss
摘要： A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.
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2.发明授权公开(公告)号：US09184051B2
公开(公告)日：2015-11-10
申请号：US14346787
申请日：2012-09-21
发明人： Peter Stauss , Philipp Drechsel
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.
摘要翻译： 制造氮化物半导体元件的方法包括：提供具有硅表面的生长衬底，将包含含铝氮化物半导体的缓冲层生长到所述硅表面上，生长产生压应力的应力层结构，以及生长 功能半导体层序列到应力层结构上，其中应力层结构包括第一GaN半导体层和第二GaN半导体层，掩模层嵌入第一GaN半导体层中，Al（Ga）N-中间层， 在第一GaN半导体层和第二GaN半导体层之间产生压应力，并且应力层结构不包含另外的Al（Ga）N中间层。
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3.发明授权公开(公告)号：US10923629B2
公开(公告)日：2021-02-16
申请号：US16348662
申请日：2017-11-22
发明人： Alexander Tonkikh , Peter Stauss
摘要： A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.
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公开(公告)号：US20150228858A1
公开(公告)日：2015-08-13
申请号：US14427687
申请日：2013-09-25
发明人： Werner Bergbauer , Philipp Drechsel , Peter Stauss , Patrick Rode
CPC分类号： H01L33/325 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/025 , H01L33/12 , H01L33/32
摘要： An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.
摘要翻译： 光电子部件包括具有第一氮化镓层和含铝氮化物中间层的层结构。 在这种情况下，含铝氮化物中间层与第一氮化镓层相邻。 层结构具有与含铝氮化物中间层相邻的未掺杂的第二氮化镓层。
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公开(公告)号：US09660137B2
公开(公告)日：2017-05-23
申请号：US14891924
申请日：2014-05-28
发明人： Werner Bergbauer , Philipp Drechsel , Peter Stauss , Patrick Rode
CPC分类号： H01L33/0075 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.
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公开(公告)号：US10249787B2
公开(公告)日：2019-04-02
申请号：US15559409
申请日：2016-03-01
发明人： Tobias Meyer , Thomas Lehnhardt , Matthias Peter , Asako Hirai , Juergen Off , Philipp Drechsel , Peter Stauss
摘要： The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.
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公开(公告)号：US09184337B2
公开(公告)日：2015-11-10
申请号：US14335691
申请日：2014-07-18
发明人： Peter Stauss , Philipp Drechsel
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02639
摘要： A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
摘要翻译： 提供了一种制造发光二极管的方法。 在一个实施例中，一系列层沿生长方向沉积在载体的硅表面上，并且发光二极管结构沉积在一系列层上。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。
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公开(公告)号：US20140329350A1
公开(公告)日：2014-11-06
申请号：US14335691
申请日：2014-07-18
发明人： Peter Stauss , Philipp Drechsel
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02639
摘要： A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
摘要翻译： 提供了一种制造发光二极管的方法。 在一个实施例中，一系列层沿生长方向沉积在载体的硅表面上，并且发光二极管结构沉积在一系列层上。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。
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9.发明申请公开(公告)号：US20140302665A1
公开(公告)日：2014-10-09
申请号：US14346787
申请日：2012-09-21
发明人： Peter Stauss , Philipp Drechsel
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.
摘要翻译： 制造氮化物半导体元件的方法包括：提供具有硅表面的生长衬底，将包含含铝氮化物半导体的缓冲层生长到所述硅表面上，生长产生压应力的应力层结构，以及生长 功能半导体层序列到应力层结构上，其中应力层结构包括第一GaN半导体层和第二GaN半导体层，掩模层嵌入第一GaN半导体层中，Al（Ga）N-中间层， 在第一GaN半导体层和第二GaN半导体层之间产生压应力，并且应力层结构不包含另外的Al（Ga）N中间层。
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公开(公告)号：US10147601B2
公开(公告)日：2018-12-04
申请号：US15304488
申请日：2015-04-13
发明人： Philipp Drechsel , Werner Bergbauer , Juergen Off , Peter Stauss
IPC分类号： H01L31/0256 , H01L21/02 , H01L33/00 , H01L33/12 , H01L33/32
摘要： What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminum and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).
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