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    Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip
    1.
    发明申请
    Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip 有权

    公开(公告)号：US20220131034A1

    公开(公告)日：2022-04-28

    申请号：US17435612

    申请日：2020-03-03

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Alvaro Gomez-Iglesias ,  Asako Hirai

    IPC分类号： H01L33/14 ,  H01L33/00 ,  H01L33/06 ,  H01L31/0352 ,  H01L31/18

    摘要： In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.

    Optoelectronic semiconductor chip
    5.
    发明授权
    Optoelectronic semiconductor chip 有权

    公开(公告)号：US10522699B2

    公开(公告)日：2019-12-31

    申请号：US16196915

    申请日：2018-11-20

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Strauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

    IPC分类号： H01L31/0352 ,  H01L29/15 ,  H01L33/06

    摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

    Component having a multiple quantum well structure
    6.
    发明授权
    Component having a multiple quantum well structure 有权

    公开(公告)号：US10249787B2

    公开(公告)日：2019-04-02

    申请号：US15559409

    申请日：2016-03-01

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Tobias Meyer ,  Thomas Lehnhardt ,  Matthias Peter ,  Asako Hirai ,  Juergen Off ,  Philipp Drechsel ,  Peter Stauss

    IPC分类号： H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01L33/06 ,  H01S5/34 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32

    摘要： The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

    Optoelectronic semiconductor chip
    7.
    发明授权
    Optoelectronic semiconductor chip 有权

    公开(公告)号：US10164134B2

    公开(公告)日：2018-12-25

    申请号：US15557600

    申请日：2016-03-29

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

    IPC分类号： H01L31/0352 ,  H01L29/15 ,  H01L33/06

    摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.